ZnSxSe1-x thin films (x = 0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) were prepared from thermal evaporation method in quasi closed volume with a thickness between 0.2 and 1.0 m. Thermal activation energy determined from the dependencies lnσ = f (103/T) type were between 0.43 eV 1.89 eV (for T > 300 K) and 0,132-0,403 eV ( for T < 300K). Explaining the mechanism of electron transport in polycrystalline ZnSxSe1-x thin films is based on the Efros-Shklovskii and Mott models. We have studied the current-voltage characteristics of In - ZnSxSe1-x - In type systems and the obtained results were represented in the Schottky coordinates which have been shown to be linear. By extrapolating the linear portion of curve lnJ = f(U1/2) for U 0, was determined the height of the barrier potential at the metalsemiconductor interface. The values found for the 0 accord well with those found for the ZnSe and ZnS crystals.