A possible mechanism of carrier multiplication (CM) in semiconductor quantum dots (QDs) as an inseparable successive creation of two and three electron-hole (e-h) pairs was considered in the frame of the second and third orders of the perturbation theory. The absorption process in our model begins with the annihilation of the incident photon and the creation of initial virtual e-h pair (c1, h) consisting from electron in the excited conduction band 1 c and a hole in the valence band v . In the following evolution the main role in our model is played by the Coulomb scattering of the electron 1 c interacting with another valence electron v , which is promoted across the semiconductor band gap into the lowest conduction band 0 c where the electrons are accumulated. In such a way the second e-h pair 0 (c ,h) is created, whereas the scattered electron transfers itself in another conduction band 2 c . Such scattering is characterized by two quantum-transition dipole moments c1c2 d r and vc0 d r . The Coulomb interaction in this case is known as long-range dipole-dipole interaction. The described scattering event is equivalent to the conversion 1 2 0 c →(c ,c ,h) of one electron into the complex of three unbound particles. When the conduction band 2 c coincides with 0 c the creation of two pairs is finished. If the electron 2 c will be able to repeat the same scenario, the creation of three e-h pairs will take place being described in the third order of the perturbation theory and so one. The model of crystal with many parabolic conduction bands and with one parabolic valence band with the extrema in the center of Brillouin zone was used, supposing that the QDs are assembled in the forms of impenetrable spheres with strong size quantization. The band-toband quantum transition under the influence of the electron –radiation interaction take place between the size quantized states of the electrons and holes with the same quantum numbers l, n,mof envelope functions what considerable simplify the calculations. The multiple inseparable repetitions of conversion event can describe the CM process with arbitrary number of e-h pairs more than one. An alternative mechanism related with the quantum fluctuation in the electron-photon system leading to the simultaneous creation from the vacuum of one e-h pair and of a secondary photon is discussed. When their creation energies are supplied by the energy of the incident photon the CM process is accompanied by the Raman scattered photon. In the first case the CM process is characterized by Lorentzian-type absorption peaks, whereas the CM accompanied by the Raman scattered photon is characterized by a smooth absorption plateau.