The purpose of this paper is to obtain zinc oxide thin films with high homogeneity by combining advantages belonging to synthesis method by ultrasonic spray pyrolysis with conditions of deposition in plasma obtained by discharge. Promising results obtained by combining two technological methods for controlled synthesis of semiconductor nanostructures, including zinc oxide are communicated in a series of papers. Paper [1] presents the results of laser ablation application in the fabrication of ZnO nanorods by chemical vapor deposition. Aplication of laser ablation in initial stage of growth of nanorods has significant effects on morphology, growth direction and number density of ZnO nanorods. Another synthesis combined method is to apply flame pyrolysis which derives ZnO nanostructured materials in spheroidal and hexagonal particles with sizes 5-20 nm [2-4]. Flame aerosol synthesis is a cost-effective and versatile process for controlled production of nanoparticles. Positive results published in the latest works promote studying opportunities for the application of other combined methods for ensuring controlled synthesis conditions of zinc oxide structures with programmed properties. Original results obtained by application of synthesis combined method of zinc oxide films in plasma with application of ultrasonic spray pyrolysis are presented in the work. The synthesis was performed on Si support heated at the temperature range 200 - 8000C in a vacuum technology chamber. Dispersion of precursor for pyrolysis was performed with an ultrasonic device at the frequency of 2.64 MHz. Zinc nitrate solution with concentration 0.1 Mol was sprayed as a get oriented to the support through the gap of two graphite electrodes. Plasma obtained by high voltage electrical discharge between the electrodes creates favorable energetic conditions for pyrolysis and homogeneous deposition of ZnO film process.figureFig.1. Regions of the surface of ZnO films obtained by synthesis combined method in plasma with the application of pyrolysis at different support temperatures: a) - support temperature 8000C; b) - support temperature 5000C.The pictures in Fig. 1 represent regions of the surface of ZnO films obtained by synthesis combined method in plasma with the application of pyrolysis at different support temperatures. Increase at microscope of about 400 times allows to identify crystalline particles with sizes depending on the thermal regime of the support in the films structure. An area of the film obtained at support temperature of 8000C is represented in the left image (a). The film region shown on the picture on the right (b) was obtained at the support temperature of 5000C. Factors which influence the quality of films were identified: support temperature, distance between support and unloading area and chamber pressure.Photoluminescence spectra of synthesized ZnO structures measured at 300 0K show the peaks at 390 nm, 500 nm and 590 nm. Fabricated ZnO structures can be studied for various applications in optoelectronics and sensors.