Indium monoselenide InSe belongs to a broad class of layered semiconductors, characterized by strong structural anisotropy caused by different types of chemical bonds along the layers (covalent bounding) and between the layers (Van der Waals bounding). The existence of weak coupling between the layers and the absence of dangling bonds, practically exclude the possibility of formation of the surface levels, concentration of those is a two orders of magnitude smaller than in conventional semiconductors. This allows by simple cleaving of layers the fabrication of optically homogenous sample with the thickness up to one micrometer with natural smooth surface and not requiring additional processing. These facts in combination with high sensitivity to electromagnetic radiation in visible and infrared spectral region stimulate the creation and research of various types of diode structures (Schottky barriers, structures metaldielectricsemiconductor, semiconductor-dielectric-semiconductor p-n homojunction, isotype and anisotype heterojunctions) for various purposes of photo-, opto- and quantum electronics [1, 2]. In this paper the results of the research on electrical and photoelectrical properties of the isotype n-InSe/n-fullerite С60 and anisotype p-InSe/n-fullerite С60 heterojunctions are presented. n-InSe and p-InSe single crystals were obtained using the Bridgman-Stockbarger method. The plates with thickness from 100 to 500 mm were cleaved from single crystals blocks. The electrical properties for both single crystals and fullerite C60 thin films are investigated. For obtaining the isotype n-InSe/n-fullerite С60 and anisotype p-InSe/n-fullerite С60 heterojunctions, firstly, indium or silver layer, respectively, was deposited upon the surface of just cleaved n-InSe and p-InSe plates using the method of the vacuum thermal evaporation. These layers serve as a back electrode in electric measuring. Then, on the opposite surface of the n-InSe and p-InSe plates the thin films of fullerite С60 with 0,2-0,5 mm thickness were deposited. Finally, on the surface of fullerite С60 thin films were deposited semitransparent layers of aluminium in the form of disks with area of 1,77×10-2 cm2 served as frontal electrodes in electrical measurements. The current-voltage characteristics of n-InSe/n-fullerite С60 and p-InSe/n-fullerite С60 heterojunctions at different temperatures in darkness as well as under light illumination were measured. Typical I-U dark characteristics of isotype n-InSe/n-fullerite С60 and anisotype p-InSe/n-fullerite С60 heterojunctions exhibit rectification properties. The rectification ratio for some samples reaches the value of 34,7 at ±0.4 V and ~600 at ±0.8 V for isotype n-InSe/n-fullerite С60 and anisotype p-InSe/n-fullerite С60 heterojunctions, respectively. For both structures forward bias voltage corresponds to negative potential on fullerite С60 thin films. The analysis of dark current-voltage characteristics is performed being taken into account in the equivalent circuit of heterostructures of series and shunt resistances. It is shown that for both structures in the range of lower applied voltage the current-voltage characteristics are determined by generation-recombination processes in the range of space charge. At further increasing of applied forward voltage prevails tunneling or multi-step tunneling-recombination mechanisms of charge transfer. At light illumination of the n-InSe/n-fullerite С60 and p-InSe/n-fullerite С60 heterojunctions a photovoltaic effect are observed. The dependences of the main parameters of the photovoltaic device such as open-circuit voltage Uoc, short-circuit current density Jsc and fill-factor FF on temperature and light intensity are determined. For n-InSe/n-fullerite С60 heterojunctions at light intensity of 100 mW/cm2 at room temperature was obtained: Uoc=0.16 V, Jsc=272.1 mA/cm2 и FF=0.3-0.4. Also, was found, that both Jsc and Uoc decrease with increasing temperature. For p-InSe/n-fullerite С60 heterojunctions at light intensity of 100 mW/cm2 was obtained: Uoc=0.16 V, Jsc=9.1 mA/cm2 и FF=0.41. The low values of obtained parameters are attributed to the high series resistance of the device (Rs~104 W), which is due to high resistivity of fullerite thin C60 films (r~106-1012 W cm). The possibilities of increase of the main photo-electric parameters of the investigated structures are being discussed.