Chalcogenide glass semiconductors (ChGS) are pointed out to be promising materials for diffractive and holographic optical elements in optical processing systems, photoresists in photolithography including the submicron range structures. ChGS exhibit a number of interesting optical properties such as high resolution (104mm-1) and diffraction efficiency (50%), but low photosensitivity significantly restricts the field of ChGS application. The aim of this work is to study the possibilities of increasing the photosensitivity of ChGS thin films by electrical field application during recording process. In the given work process of registration of holographic gratings on thin-film structure Cu-As2Se3 in the field of corona discharge was investigated. Investigated structures were received by the method of consecutive thermal evaporation of selected materials in vacuum on glass substrates. As a source of coherent radiation He-Ne laser (λ = 0,63 μm) was used. The value of the filed of corona discharge was varied in the range of 5-8 kV. It was established that at negative potential on corona discharge electrode the application of electric field in the recording process leads to increase several times sensitivity and diffraction efficiency (Fig.). But the application of positive potential on corona discharge electrode leads to degradation of holographic gratings registration in Cu-As2Se3.figureFig. Dependence of diffraction efficiency on recording time during holographic gratings on Cu-As2Se3 structures.