In this paper the temperature dependences of resistance R(T) in bismuth nanowires in the field of the transition semimetal-semiconductor which predicted in paper [1] at diameters of wires d <100 nm in the range of temperatures 4,2 – 300 К were investigated. The single-crystal bismuth wires in glass insulation were obtained by casting from liquid phase method [2]. X – Ray diffraction investigation and rotation angle diagram transverse magnitoresistance at 300 K have shown that the axis of wires the ГL direction located in the Brillowin zone in the bisectortrigonal plane and making an angle 19,5º with the bisector. It is established that temperature dependences of resistance R(T) of Bi wires essentially depend on diameter of wires d and at diameters of wires d < 80 nm have "semiconductor" character [3].It is shown that by means of anisotropic elastic deformation of a stretching at the expense of effect of movement of borders of bands and realization of electronic topological transitions of Lifshits it is possible to operate by overlapping L and T bands. On figure 1 present temperature dependences of the resistance R(T) for a 55 nm Bi nanowire at different values of the elastic tension.figureFig. 1 Temperature dependence of the resistance R(T) Bi- wires, d= 55 nm at different values of the tension: 1. x=0, 2. x= 0.7%, 3. x= 1.9%.It is established that elastic deformation of Bi nanowires orientation (1011) along the wire axis with semiconductor dependence R(T) leads to approach of L and T bands and semiconductor-semimetal transition. Temperature dependences R(T) becomes character "metal", and on magnetofields dependences R(H) appears ShdH oscillations from L - electrons. Present results are in qualitative agreement with the predictions of the theory [1, 4] about transition semimetal-semiconductor in quantum B- wires and in the paper shown that it is possible to carry out return of semiconductor-semimetal transition on the same sample – Bi quantum wires with the help of elastic stretching.