NNN 20P Thermoelectric properties of Bi wires strongly doping donor impurity
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NIKOLAEVA, Albina, KONOPKO, Leonid, TSURKAN, Ana, ISTRATII, Evghenii. NNN 20P Thermoelectric properties of Bi wires strongly doping donor impurity. In: Materials Science and Condensed Matter Physics, 13-17 septembrie 2010, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2010, Editia 5, p. 215.
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Materials Science and Condensed Matter Physics
Editia 5, 2010
Conferința "Materials Science and Condensed Matter Physics"
Chișinău, Moldova, 13-17 septembrie 2010

NNN 20P Thermoelectric properties of Bi wires strongly doping donor impurity


Pag. 215-215

Nikolaeva Albina12, Konopko Leonid21, Tsurkan Ana1, Istratii Evghenii1
 
1 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu",
2 International Laboratory of High Magnetic Fields and Low Temperatures
 
 
Disponibil în IBN: 21 aprilie 2021


Rezumat

The anomalous dependence of the thermoelectric power on the wire composition in Bi wire, doped with donor impurity up to 1.5at % was observed. This behavior is typical for the Lifshits electronic topological transitions, obtained in the bulk Bi samples doped with Te [1]. In contrast to studies in [2] we also studied the ShdH oscillations on R(H) Bi wires, doped with different degrees of Se and Te to 1.4 at.% Te. Single-crystal wires doped donor impurity Bi were obtained by casting from the liquid phase by the method Ulitovsky in a glass cover [3] with diameters from 300 nm to 5 microns. The position chem. potential of L-electrons was estimated from the Shubnikov de Haas oscillations, which were clearly visible both in longitudinal (H || I), and in the transverse (H ^ I) configuration for Bi-doped wires of all diameters investigated. A clear reduction of the period D(1/H) in the ShdH oscillations from L electronic ellipsoids testifies to displacement of chemical potential deep into L conductivity band at doping. Temperature dependence of thermoelectric power a (T) for Bi wires, doped with donor impurity Te with different positions chem. potential are shown in Fig. 1figureFig. 1 Temperature dependencies of thermopower α(T) in Bi-Te wires: 1. Bi-0.04at.%Te, d=3 μm; 2. Bi0.08at.%Te, d=2,5 μm; 3. Bi-0.1at.%Te, d=2 μm; 4. Bi-0.2at.%Te, d=3 μm; 5. Bi-0.3at.%Te, d=2 μm; 6. Bi0.5at.%Te, d=2 μm; 7. Bi-1.4at.%Te, d=3 μm.Anomalies in thermopower on a(T) Bi wires alloyed consists that dependence a(T) shows essential nonmonotony from structure of an alloying impurity. At doping, thermopower decreases on absolute size practically to «0» at wires Bi-0.3 ат % - 0.5 ат % Te, and at doping to 1,5 ат % Te, thermopower a at Т = 300 К increased again and constitute -70 μV/K (Fig. 1). In Bi wires doping donor impurity Sе was shown a similar anomaly on a(T). Us for the first time have been found out ShdH oscillations from T - band conductivity confirming experimentally occurrence T - band conductivity at doping bismuth by phonon impurity. The effect of the anomalous dependence a(Nd) is interpreted in terms of interband scattering of Lelectrons in the T- conduction band, with a high density of the state, arising at strong doping.