Mixed-valence (partial charge transfer state) and segregated stacking are the key factors for constructing organic metals. Here, we discuss anion-radical salts TCNQ (tetracyanoquinodimetan) as a charge transfer systems which provide a strategy for the development of the functional organic materials: organic semiconductor and metals, switching and memory systems and others. Numerous functional charge transfer complexes have been developed based on their peculiar electronic and structural aspects. For manifest high conductivity of the considered complexes, the mixed valence state is the essential feature required in the electronic structure. Such a concept is also important for nonlinearity in transport and optical properties. TCNQ is a good electron acceptor and its salts of the resulting radical anion show a wide range of interesting electronic properties varying such as high electrical conductivity, ferromagnetic behavior and others. The architecture of these salts plays a major role in determining their electronic properties and we have been exploring ways of controlling their solid-state structures with a view to "designing" interesting new materials. Among the main classes of TCNQ salts are the neutral segregated (type NS) stacks, the metallic mixed-valence alternating (type MA) stacks, the metallic segregated (type MS) layers with chargeordered (CO) states, and the metallic segregated stacks with fully ionized (type IS) states. These charge transfer complexes usually have non-small one-site Coulomb repulsion energy (U) constant.In the offered paper the chain of the dimers (strongly correlated two habbard atoms) is considered. One-site Coulomb repulsion of the electrons U ~1,5 эВ, is considerably surpasses value of tunneling constant t0 ~0,1 эВ. Hence, for the specified systems one-electronic Hartri-Fock approach, generally speaking, it is inapplicable. Consecutive consideration of correlations in the electronic systems it is possible to carry out within the limits of Hubbard's model. In frame of proposed model the quasi-isolated dimer (two metal- TCNQ complexeses) with two electrons and one soft full-symmetrical vibrational mode ~100 cm-1 (neighboring stacks are linked through the coordination of metal ion with the cyano groups) is considered as component of the extended face-to-face stacked columns which forming to the metal- TCNQ complexeses. For describing of the charge transfer processes in the mixed-valence stacks of metal- TCNQ was used extended dimerized Hubbard Hamiltonian. In this model may be realized two mechanism of the electron transfer between centers of dimer (M+M+→M2+M0, M0M2+→M+M+ or M2+M0→M0M2+). It is shown that the account of electron-vibrational interaction redefines the constant of the one-site Coulomb repulsion. It promotes two-electronic transfer and strongly changes of the transport properties of the investigated systems.