It is known that introducing of vanadium impurity in Pb1-xSnxTe alloys results in appearance of deep vanadium level EV, stabilizing the Fermi level in the energy spectrum of these alloys [1-3]. In alloys with x>0.08, in which it lies within the gap, transition to the insulating phase at helium temperature under vanadium doping was revealed [3]. In order to investigate the electronic structure rearrangement under pressure in the present work the galvanomagnetic properties (T=4.2-300 K, B£8 T) of Pb1-x-ySnxVyTe (x≈0.18, y≈0.01) alloy under hydrostatic compression up to 15 kbar are studied. It was shown that at atmospheric pressure temperature dependencies of resistivity r(1/T) and Hall coefficient RH(1/T) have an activation character in the whole investigated temperature range, associated obviously with existence of deep vanadium level under the bottom of conduction band (Fig. 1, 2). Under pressure activation energy of the level ΔEV, determined from the slope of the r(1/T) dependencies, decreases almost linearly, where as the n-p-inversion of the RH sign at low temperatures and its gradual shift to the higher temperatures take place. At critical pressure P*≈7 kbar activation energy ΔEV tends to zero and insulator-metal transition occurs. Further increase of pressure induces an increase of the concentration of free holes, determined from the values of RH and period of Shubnikov-de Haas oscillations at T=4.2 K. Obtained experimental results are discussed in the frame of the model assuming the linear shift of vanadium deep level towards valence band top under pressure and opposite movement of the level with the increase of temperature. In this model the n-p-inversion of the RH sign on the temperature dependencies of the Hall coefficient may be attributed to the intersection of vanadium level with the middle of the gap under variation of temperature, while the insulator-metal transition – to the intersection of the level with the valence band top and redistribution of electrons between the band and the level under pressure. The diagram of the electronic structure rearrangement under pressure in Pb1-x-ySnxVyTe are proposed.FigureFig. 1. Temperature dependencies of resistivity and Hall coefficient in Pb1-x-ySnxVyTe under pressure.