The Cu2ZnSnS4 crystals were grown by chemical vapor transport using iodine as a transport agent. The energy dispersive X-ray microanalysis (EDAX) was used to analyze the correspondence of the crystals to stoichiometry, and showed the high quality of the samples. The temperature dependence of resistivity of the samples was measured by Van-der-Pauw method. The shape of obtained temperature dependence of the resistivity (Fig. 1a) shows two regions with different types of conductivity. At the high temperature region (150 K - 300 K), according to the analysis, was observed nearest-neighbor hopping type of conductivity (NNH). According to the theory described in [1] we can determine the temperature region of this type of conductivity by plotting the temperature dependence of the resistivity in corresponding coordinates (Fig. 1b), or by the method of the local activation energy. Both methods gave similar values and temperature range (170 K – 280 K) in which NNH is observed. Also, both methods allow us to determine the activation energy of the hopping conductivity, the value for investigated samples was about 27 meV. At temperatures below 150 K it is evidently that the slope of curve of temperature dependence of the resistivity becomes variable. This fact allowed suggesting that at temperatures below 150 K conductivity with variable range hopping (VRH) is observed. There are two types of VRH: Mott type (Mott-VRH) [2] and the Shklovskii-Efros type (SE-VRH) [1]. Further analysis showed that in the investigated temperature range only Mott-VRH is observed, with the following parameters: temperature range in which was observed MottVRH was 60 K – 110 K, the width of the band of the localized states was around 34 meV.figureFig. 1. a) Temperature dependence of resistivity of Cu2ZnSnS4 bulk single crystals; b) in the coordinates ln(ρ/T) from (1/T) to determine the temperature range in which NNH type conductivity observed.