Heterojunctions of the monocalogenic gallium and indium-oxide proper possesses high photosensibility in the visible-IR near domain of the spectrum. The proper oxide layer on the surface of the monocrystalline GaSe or InSe blades usually is obtained by long duration thermal treatment (up to several tens of hours) in normal atmosphere at the temperature of 400÷500°C. Regardless to the low density of the valence bounds on the surface of the primary layers (atomic plane of Se) in the oxidation process a new valence bound is generated and respectively the increase of the concentration of the defects on the GaSe-oxide interface. Presence of these defects leads to the shift of the photosensibility band margin towards big energies of up to ~2.5eV. At the same time as a result of the thermal treatment at temperature of 420÷500°C it takes place the diffusion of the oxygen in the layer at the surface of the GaSe layers which are creating the compensatory levels for majority charge carriers. This process leads to the decrease of the electrical conductivity of the GaSe layer on the semiconductor-oxide interface. In this work for the decrease of the concentration of the defects at the surface of the heterojunction oxid-GaSe the layer of proper oxide is replaced with a layer on ZnO doped with Al with concentration between 0.05÷5% at. ZnO:Al-GaSe structures were obtained through the oxidation at the temperature of 420°C in normal atmosphere of the GaSe films with a layer of 50÷100nm of Zn:Al for 0.3 hours. Were studied the reflection spectrums in the interval of wave lengths 200÷90nm of the optical transmission spectrums in the region of proper absorption band margin of the GaSe compound. Optical constants of the ZnO:Al in the region of margin of the fundamental absorption band were determined from the measurements of the ellipsometric parameters Ψ and Δ. In order to determine the structure of the energetic states localized in the interdicted band of the GaSe monocrystals was researched the spectrum of luminescence emission at selective excitation of the ZnO:Al layer with laser radiation N2 (λ=337,4 nm). Photoluminescence of the GaSe layer from the surface of the ZnO:Al:GaSe heterojunction was excited with a beam of monochromatic light with length of λ=533nm. Together with the shift towards big energies of the margin of the fundamental absorption band when the concentration of the Al in the ZnO is increased it takes place an increase of the intensity of the photoluminescence through the recombinatory level created by the doping atoms. It is determined the energy of the energetic layers in the interdicted band of the ZnO film doped with Al with concentration of 0.05, 0.5, 1.0 and 5.0% at. At the same time from the analyses of the photoluminescence spectrums, light absorption and refraction are determined the energies of the states localized in the interdicted band of the GaSe monocrystals from the ZnO:Al-GaSe interface.