The interest to investigations on the structure and chemical composition of the conducting intrinsic oxide (Ox) formed on the surface of layered InSe at various time-temperature regimes is caused by the possibility to use “Ox-InSe” heterocontacts as radiation stable photodiodes, solar cells, sensors of polarized radiation,etc. As follows from the literature data, the Ox formed on the InSe surface consists of In2Se3 at T = 320-420°C; In2Se3, In2(SeO4)3 and In2O3, at T = 420-600°C and In2O3 at T > 600°C. It is accepted that any oxide phase on the InSe surface at T < 320°C is not formed. In this communication we have shown that transparent dielectric Ox films formed on the InSe surface at T< 100°C consists of Se2O5 with the inclusions of nanoparticles of pure In. The mechanisms of charge transfer in such Ox films are investigated. It is shown that the ohmic I-V characteristic at low fields is due to hopping of thermally excited electrons from one isolated state in the Ox to another. With increasing electrical field the trap-filling and space-charge-limited current regimes become observed. At high fields the current dominated by the Poole-Frenkel effect at T< 10°C and the Schottky emission at T>10°C. It is established that asymmetry of current transfer in the “Ox-InSe” heterocontacts is due to the different concentration and different distribution of traps on energy at regions closed to the “Ox/semiconductor substrate” and the “Ox/contact at the surface of the oxide films” interfaces. At T>10°C after exposure of samples in high electric fields during 1-3 minutes the switching and memory phenomena in Ox films are observed. And in “high resistivity condition” Ox films are characterized with typical for semiconductor multiple-quantum-well structures or superlattices (including disordered ones) Z- and N-shaped current-voltage characteristic. The qualitative model for interpretation of experimental results is suggested.