Chalcogenide glasses (ChG) (i.e. vitreous compounds of chemical elements from IV-th and V-th groups of the Periodic table with chalcogens – S, Se or Te) are unique disordered solids widely used in IR optoelectronics and photonics. ChG extreme sensitivity to the influence of external factors such as highenergy irradiation is very useful in respect to practical implementation of these disordered materials. That is why the problem on estimation of radiation-induced structural changes efficiency in ChG seems to be very important. Unfortunately, the structural modification model [1] developed up to now gives no quite adequate possibilities to resolve this problem. In this work, we have presented a new estimation methodology for structural modification efficiency of binary ChG of As-S(Se) system in full glass-forming region. Our approach is grounded on the assumption that radiation-induced structural changes is mainly associated with destruction-polymerization transformations, which reveal themselves as local misbalances in covalent chemical bond distribution (re-switched covalent chemical bonds), normal atomic coordination (anomalously-coordinated atoms or coordination topological defects) and intrinsic electrical field distribution (uncompensated electrical charges or charged defects). The contribution of each of these components into the total value of radiation-induced structural modification efficiency was estimated for arsenic sulfides and selenides of stoichiometric and nonstoichiometric compositions. It was shown that compositional dependences of structural modification numerical criteria could be associated mainly with defects formation processes of different ChG systems.