MSP 25P Growth methods of large and structurally perfect АIIВV single crystals
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TRUKHAN, V., SHOUKAVAYA, T.. MSP 25P Growth methods of large and structurally perfect АIIВV single crystals. In: Materials Science and Condensed Matter Physics, 13-17 septembrie 2010, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2010, Editia 5, p. 93.
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Materials Science and Condensed Matter Physics
Editia 5, 2010
Conferința "Materials Science and Condensed Matter Physics"
Chișinău, Moldova, 13-17 septembrie 2010

MSP 25P Growth methods of large and structurally perfect АIIВV single crystals


Pag. 93-93

Trukhan V., Shoukavaya T.
 
ГНРО Научно-практический центр НАН Белоруси по материаловедению
 
Disponibil în IBN: 15 aprilie 2021


Rezumat

Growth methods of cadmium and zinc diphosphide (tetragonal modification), zinc diarsenide and cadmium phosphide single crystals which practical application is possible in optoelectronics and spintronics are considered in the work [1]. The CdP2 single crystals were obtained from preliminary synthesized cadmium diphosphide. The optimum growth conditions are found in the work [2]: crystallization temperature (996-1009 K), speed of moving of an ampoule (0.6-0.8 mm/h), time of annealing (72 hours) and method of cooling, which provide the growth of tetragonal modification cadmium diphosphide. Bulk single-crystal boules up to 20 mm in diameter and 40-50 mm in length were grown. The CdP2(т) single crystals have optical damage threshold increased, resistance is 4·109 Ohm, that is important, for example when creating photoresistors, because it is possible to increase the light intensity falling on a CdP2(т) sample and photocurrent of the photoresistor, accordingly. It is necessary to note that on the basis of various temperature conditions of CdP2 growth and cooling and of research on phase equilibrium in system Zn-Cd-P-As, authors of the work suggest, that monoclinic CdP2 compound does not exist. The tetragonal and monoclinic ZnP2 crystals are grown from the vapor phase. It is established, that the optimum difference between zones of evaporation and crystallization is 20-40 degrees. Mainly tetragonal phase ΖnΡ2, which is the most perspective for practical application, grows at temperatures 1100-1110 К, 1070-1078 К in a zone of evaporation and crystallization, accordingly. The radial temperature gradient is 1-4 degrees. The tetragonal ZnP2 single crystals are grown in the form of four and octahedral prisms. The new growth technology in which synthesis and growth are combined into a single technological process is developed for ZnAs2 single crystals. Optimal technological conditions are defined: at 780°С temperature an ampoule is moved towards zone of crystallization with a speed of 8-0.1 mm/hour and temperature gradient is not more than 8.5 deg/cm. Large (up to 20 mm in diameter and 40-50 mm in length) optically uniform ZnAs2 single crystals were grown, characterized by transmission increased (at 1.4 times in the 1.2-15 μm spectral region). It is known, that Cd3P2 single crystals can be used as elements for lasers with electronic pumping [3]. A growth method for needle Cd3P2 single crystals is developed in the work [4]. The Cd3P2 polycrystalline is heated to temperatures of evaporation and crystallization 820-830 К, 740-750 К, accordingly. When using Cd3P2 single crystals as a source of diffusion on the surface of the substrate InP received electronic round hole transitions were uniform in depth. It is especially important for heterostructure on the basis of АIIIВV semiconductors; because of heterostructure small thickness it is impossible to correct their surface after the erosion by traditional mechanical methods.