CMT 4 P Nonlinear transmission of ultrashort laser pulses by a thin semiconductor film under two-photon generation of biexcitons
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BELOUSSOV, Igor, KHADZHI, Peter, COROVAI, Alexandru, MARKOV, D.. CMT 4 P Nonlinear transmission of ultrashort laser pulses by a thin semiconductor film under two-photon generation of biexcitons. In: Materials Science and Condensed Matter Physics, 13-17 septembrie 2010, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2010, Editia 5, p. 57.
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Materials Science and Condensed Matter Physics
Editia 5, 2010
Conferința "Materials Science and Condensed Matter Physics"
Chișinău, Moldova, 13-17 septembrie 2010

CMT 4 P Nonlinear transmission of ultrashort laser pulses by a thin semiconductor film under two-photon generation of biexcitons


Pag. 57-57

Beloussov Igor1, Khadzhi Peter12, Corovai Alexandru2, Markov D.2
 
1 Institute of Applied Physics,
2 T.G. Shevchenko State University of Pridnestrovie, Tiraspol
 
 
Disponibil în IBN: 14 aprilie 2021


Rezumat

The possibility was investigated to compress and to split laser pulses at their nonlinear optical transmission through thin semiconductor films. The effects of nonstationary nonlinear transmission of short pulses of resonant laser radiation through a thin semiconductor film in the conditions of two-photon generation of biexcitons from the crystal ground state were studied theoretically. The transmission of a pulse with small intensity through the film only slightly changes its form. For small values of detuning, the maximum of the passed pulse precedes the maximum of the incident pulse (supraluminal propagation). Inversely, at large detunings a retardation of the passed pulse relative to the incident pulse occurs. When the film thickness diminishes at the same intensity of the incident pulse, the dependence of the passed radiation versus the resonance detuning becomes weaker. Even for small detuning values the maximum of the passed radiation will be close to the maximum of the incident pulse. Despite the larger number of biexcitons will be generated in the system compared to the previous case, the character of transmission of the laser pulse will be determined not so much by its interaction with the biexcitons, but by the background dielectric permittivity of the medium. The pulse passes through very thin films virtually unchanged. On the contrary, when the intensity of the incident radiation increases at the same thickness of the film, a strong transformation of the incident pulse takes place at the small values of the resonance detuning; the passed pulse exhibits a significantly less duration. With the subsequent increasing of the intensity of the incident pulse, its transformation occurs into a sequence of two, three or more narrow pulses. When the resonance detuning increases, the incident pulse begins to split for larger values of its intensity. The intensity of the passed radiation and the density of biexcitons nonmonotonically decrease with the increasing of the film thickness. There appear the intervals of the film thicknesses L where besides the main peak, whose height decreases with the increasing of L , the appearance of additional narrow peaks is possible. For large intensities of the incident radiation, there exist such intervals of the film thicknesses where the main peak is virtually absent, though more than one narrow peaks can exist in the passed radiation. Thus, the film substantially transforms the pulse passed through it by changing not only its intensity, but also its form. Using the films with various thicknesses and changing the intensity of the incident pulse and the value of the detuning of two-photon resonance, one can obtain the compression of the incident pulse or split it into a sequence of two or more pulses with considerably less duration.