Control of thermal conductivity down to the sub-1 W m-1 K-1 range at the nanoscale via individual phonon scattering barriers has been recently achieved in multilayered Ge/Si quantum dot (QD) arrays with as little as 5 barriers [1]. We investigate the effect of the electron miniband energy spectrum of periodic 1D stacks of self-assembled InAs/GaAs QDs with different geometrical parameters on their electronic transport characteristics employing the Boltzmann transport equation. With this aim, complementary calculations of the electron minibands are performed using the tight-binding and Kronig-Penney models [2]. The transport relaxation time reveals a significant dispersion as a function of the wave vector in the stacking direction. The chemical potential for electrons is related to the donor concentration taking into account both minibands and a conduction band continuum. The electric and thermal conductivities, the Seebeck coefficient and the figure-of-merit reflect the miniband electron energy spectrum of the QD stack and thus can be used as experimental fingerprints of its electronic structure. For QDs several nanometers in height, the figure-ofmerit at temperatures below 100 K as a function of doping is richly structured, reflecting the miniband electron energy spectrum of a QD (Fig. 1). A 1D stack of QDs achieves a geometry-controlled enhanced efficiency as a thermoelectric converter in certain windows of the donor concentration. For optimizing the peak values of the figure-of-merit attainable for donor concentrations within the experimentally accessible range, a very thin spacer layer between the QDs (less than 5 nm) is found to be most suitable. Acknowledgements: Fruitful discussions with O. G. Schmidt and A. Rastelli are gratefully acknowledged. The work was supported by the DFG SPP 1386, the International Bureau of the BMBF (Germany) under Project MDA 09/007 and the ESF Exchange Grant 2157.