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SM ISO690:2012 KNAP, Wojciech , COQUILLAT, D., DIAKONOVA, N., TEPPE, Fréd́eric. Silicon versus III-V semiconductor material choice for terahertz imaging with nanometerfield effect transistors based detectors. In: Materials Science and Condensed Matter Physics, 13-17 septembrie 2010, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2010, Editia 5, p. 27. |
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Materials Science and Condensed Matter Physics Editia 5, 2010 |
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Conferința "Materials Science and Condensed Matter Physics" Chișinău, Moldova, 13-17 septembrie 2010 | |||||
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Pag. 27-27 | |||||
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Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for micrometer and sub-micrometer channel lengths 1,2. Nonlinear properties of the electron gas in the transistor channel can be used for the detection of THz radiation. The possibility of tuneable narrow band detection in sub-THz and THz range, related to plasma resonances, has been demonstrated for short gate transistors at cryogenic temperatures. At room temperatures - the plasma oscillations are usually strongly damped, but FETs can still operate as efficient broadband THz detectors. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging. We discuss in details the importance of the material issue – comparing III-V GaAs3,4,6 and GaN HEMTs with Silicon MOSFETs5. |
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