Tunnel junctions in Bi and Bi0.97Sb0.03nanoconstrictions
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KONOPKO, Leonid; NIKOLAEVA, Albina; HUBER, Tito; SLOBODENYUK, K.. Tunnel junctions in Bi and Bi0.97Sb0.03nanoconstrictions. In: Proceedings of SPIE - The International Society for Optical Engineering. Volume 11718, 20-23 august 2020, Constanta. Bellingham, USA: SPIE, 2020, p. 0.
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Proceedings of SPIE - The International Society for Optical Engineering
Volume 11718, 2020
Conferința "Advanced Topics in Optoelectronics, Microelectronics and Nanotechnologies X 2020"
Constanta, Romania, 20-23 august 2020

Tunnel junctions in Bi and Bi0.97Sb0.03nanoconstrictions


DOI: https://doi.org/10.1117/12.2571226
Pag. 0-0

Konopko Leonid1, Nikolaeva Albina1, Huber Tito2, Slobodenyuk K.1
 
1 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu",
2 Howard University
 
Disponibil în IBN: 28 ianuarie 2021


Rezumat

Here we investigated the field emission effect in nanoconstrictions made on the basis of the microwire in glass insulation. Glass-coated single-crystal microwires of Bi and Bi-Sb were fabricated by the Ulitovsky method; then, using the technique of local laser heating, nanoconstrictions were made. We investigated the field electron emission obtained in Bi and Bi0.97Sb0.03 nanoconstrictions at various temperatures and different potentials on the gate electrode. We observed a change in the field emitted electron current depending on the potential on the gate electrode. This difference ΔI/I=0.26 is a manifestation of the change in the microwire tip potential due to the electric field effect.

Cuvinte-cheie
Bi, Bi-Sb, Current voltage characteristic, Field effect, Field emission, Glass-coated microwire, Nanoconstriction