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| Ultima descărcare din IBN: 2024-03-29 23:21 |
 SM ISO690:2012QASSEM, Amjad-Al, GAGARA, Ludmila, FEDOROV, Vladimir, LUNGU, Ion, POTLOG, Tamara. Comparative study of the P-CDS/N-cdte photovoltaic devices with depleted intrinsic layer. In: IFMBE Proceedings: . 4th International Conference on Nanotechnologies and Biomedical Engineering, Ed. 4, 18-21 septembrie 2019, Chişinău. Switzerland: Springer Nature Switzerland AG, 2020, Ediția 4, Vol.77, pp. 707-711. ISBN 978-303031865-9. ISSN 16800737. DOI: https://doi.org/10.1007/978-3-030-31866-6_125 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 IFMBE Proceedings Ediția 4, Vol.77, 2020 |
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Conferința "Conference on Nanotechnologies and Biomedical Engineering" 4, Chişinău, Moldova, 18-21 septembrie 2019 | |||||||
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| DOI:https://doi.org/10.1007/978-3-030-31866-6_125 | |||||||
| Pag. 707-711 | |||||||
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In fabricating CdS/CdTe photovoltaic devices by close space sublimation method, thermal annealed in CdCI2 ambient at 400 °C at the interface is deposited an i-CdO layer by magnetron sputtering. Comparative analysis of electrical, photovoltaic parameters and photo-response spectral distribution is studied. The insertion of i-CdO at the interface of device increases both short circuit current (Isc) and open circuit voltage (Voc). In addition, the experimental results revealed that the insertion of i-nanolayer broaden the depletion region of the device and diminish the interface state density, thus improving efficiency of the device. |
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| Cuvinte-cheie CdS/CdTe, Electrical and photovoltaic parameters, i-CdO, Photo-response |
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