A series of Cd1-xMnxTe solid solutions are related to semi-magnetic semiconductors, the magnetic properties of which are rather well studied [1]. However, additional investigations are needed, due to the possibility of band gap control in a wide energy interval (from 1,45 eV for CdTe tо 2,2 eV for Cd0,5Mn0,5Te) which allow to use these compounds in solar energetic for the fabrication of “tandem” structures. In the recent years a particular attention is paid to the fabrication of Cd1-xMnxTe thin layers with the minimum concentration of inherited defects so as the using of such technologies allow to diminish the given structures cost. One of such methods is the “shell method”. In this method the evaporation cell in which the ternary compound for the evaporation is introduced, represents a cylinder, made from tantalum [2]. The cylinder walls are rolled up in a spiral with an opening through which the evaporation occurs and the dimensions of which can be adjusted by using mobile rings, fixed at the cylinder ends. The cylinder endings are closed by two stoppers, which at the same time are also electrodes for external voltage. After introducing the material into evaporation cell, these stoppers are rather exact closing the cylinder basis, which allows to have a single substance vapor flow. The distance between the source and substrate is chosen in dependence of evaporated material properties. and is ~ 50 mm. The evaporator design gives the possibility to form on the evaporation surface of a space, where the vapors pressure is approximately equal to the pressure of the saturated vapors, which does not allow to the compound to dissociate into components. Pressure in the vacuum chamber р = 5·10-5 mm Hg.clmn., evaporator temperature Tev=1000oC; substrate temperature varied from 527oC to 567oC. Cd1-xMnxTe layers having the thickness of 8-20 μm and square about 0.5 cm2 were studied by using the results of optical transmission spectra analysis and electrical measurements. Studies show that substrate temperature decrease from 567oC to 527oC leads to the Cd1-xMnxTe layer resistance increase by an order of magnitude from 1.109Ohm to 1,7 · 1010Ohm. The Mn content increase in the composition of Cd1-xMnxTe layers from x=0,017 to x=0,03 does not significantly change their band gap value. The illumination of the layers leads to their resistance decrease by 3 orders of magnitude, and this is observed for the samples obtained at higher temperatures of substrate. The surface morphology of the obtained Cd1-xMnxTe layers was studied by using a metallographic microscope and the patterns are presented in Fig. 1(a,b). The majority of the layers are polycrystalline having a slightly observable granulation. The granules of the layers deposited on to mica substrates represent crystals of the triangular pyramid form of different size, which indicates that the layers growth occurs in [111] crystallographic direction.FigureFig.1. Surface morphology of Cd1-xMnxTe layers obtained at different substrate temperatures (a - Ts = 527 оС, b – Ts = 567 оС).1]. Гаврилова И.П. Материалы для каскадных солнечных элементов // Экспресс Информация ВИНИТИ– 1983. - №36. – С. 3-5. [2]. П. В. Жуковский, Я. Партыка, П. Венгерек. Оптическая ширина запрещенной зоны полупроводников Cd1-xMnxTe и Zn1-xMnxTe. // ФТП. – 2001. – Том 35, вып. 8. – С.937-940.