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Ultima descărcare din IBN: 2018-03-02 12:15 |
SM ISO690:2012 POTLOG, Tamara, SPALATU, Nicolae, MATICIUC, Natalia. Caracterizarea heterostructurilor CdS/CdTe/Te cu ajutorul caracteristicilor capacitate-tensiune
. In: Studia Universitatis Moldaviae (Seria Ştiinţe Reale şi ale Naturii), 2009, nr. 1(21), pp. 215-217. ISSN 1814-3237. |
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Studia Universitatis Moldaviae (Seria Ştiinţe Reale şi ale Naturii) | ||||||
Numărul 1(21) / 2009 / ISSN 1814-3237 /ISSNe 1857-498X | ||||||
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Pag. 215-217 | ||||||
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Thin Film CdS/CdTe heterojunctions were fabricated by close space sublimation at the substrate temperature 340 ±
5ºC and evaporator temperature 610oC± 5ºC. Capacitance-voltage characteristics in the region of temperatures 313 K –
363 K were measured. Was established that the capacitance of heterojunction CdS/CdTe/Te increases from 658 (cm2/pF)2,
T=313 K to 1096 (cm2/pF)2, T=393 K. The width space charge region at room temperature is 7,4 μm, but at the temperature
of 393 K are 0,15 μm. In the above mentioned temperature region the potential contact barrier height decreases from
0,8 V at room temperature (293 K) up to 0,12 V at the temperature of 393 K. The ionized-charge concentration profi le
(NA-ND) is not constant, but it is increasing together with the enlarging of the depth of heterojunction and measure temperature,
indicating to a high density of the states in the space charge region. |
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