| Articolul precedent |
| Articolul urmator |
 |
 641 0 |
 SM ISO690:2012KAPON, Eli, MEREUTZA, Alexandru, DOROGAN, Andrei, DRĂGUŢAN, Nicolae, VIERU, Tatiana, SYRBU, Nicolae, ZALAMAI, Victor. Interband optical transitions in the region of excitonic resonance in In0.3Ga0.7As/GaAs quantum wells. In: Nanotechnologies and Biomedical Engineering, Ed. 1, 7-8 iulie 2011, Chișinău. Technical University of Moldova, 2011, Editia 1, pp. 142-144. ISBN 978-9975-66-239-0.. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Nanotechnologies and Biomedical Engineering Editia 1, 2011 |
||||||
|
Conferința "International Conference on Nanotechnologies and Biomedical Engineering" 1, Chișinău, Moldova, 7-8 iulie 2011 | ||||||
|
||||||
| Pag. 142-144 | ||||||
|
||||||
 Descarcă PDF |
||||||
| Rezumat | ||||||
Reflection spectra of In0.3Ga0.7As layers with 8nm thickness with quantum wells limited by GaAs barrier layer with 100nm thickness (bottom) and 9nm (upper) had been measured at S and P polarizations in the interval of photon energies 0.6 – 1.6eV at an incident angle near the normal one (4.5о) and Brewster angle (76 о). Thin absorption lines 0.9021eV, 1.0161eV, 1.1302eV, 1.1973eV, 1.2766eV conditioned by the transitions hh1-e1(1s), lh1-e1(1s), hh2-e2(1s), lh2e-2(1s), hh3-3(1s) and lh3-3e(1s) had been revealed. The intensity of absorption lines changes in the limits 10 – 70%. |
||||||
| Cuvinte-cheie quantum wells, optical properties, exciton, resonance |
||||||
|
|
|
|
