| Articolul precedent |
| Articolul urmator |
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 SM ISO690:2012DOROGAN, Valerian, VIERU, Tatiana, VIERU, Stanislav, DOROGAN, Andrei. Photoelectric properties of nanostuctured layers. In: Nanotechnologies and Biomedical Engineering, Ed. 2, 18-20 aprilie 2013, Chișinău. Technical University of Moldova, 2013, Editia 2, pp. 115-119. ISBN 978-9975-62-343-8.. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Nanotechnologies and Biomedical Engineering Editia 2, 2013 |
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Conferința "International Conference on Nanotechnologies and Biomedical Engineering" 2, Chișinău, Moldova, 18-20 aprilie 2013 | ||||||
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| Pag. 115-119 | ||||||
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The paper is focused to study the photosensitivity modulation in crystalline and nanostructured materials. The photoresistor with modulated photosensitivity on the basis of III-V compounds was elaborated. In the results of investigation the photoresistor characteristics and the physical model to modulate photosensitivity are presented. Nanostructured films were formed by selective photo-assisted electro-chemical etching of the nGaP and n-InP substrate and were separated from it by wet chemical etching. Researches of photoelectric characteristics of nanostructured films are presented, modeled and discussed. Photoelectric properties of nanostructured layers make it possible to use such structures for the manufacture of optical detectors and switches. |
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| Cuvinte-cheie nanostructured layer, photoconductivity, photoresistor, porous film |
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Dublin Core Export
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Dorogan, V.V.</dc:creator> <dc:creator>Vieru, T.S.</dc:creator> <dc:creator>Vieru, S.F.</dc:creator> <dc:creator>Dorogan, A.V.</dc:creator> <dc:date>2013</dc:date> <dc:description xml:lang='en'><p>The paper is focused to study the photosensitivity modulation in crystalline and nanostructured materials. The photoresistor with modulated photosensitivity on the basis of III-V compounds was elaborated. In the results of investigation the photoresistor characteristics and the physical model to modulate photosensitivity are presented. Nanostructured films were formed by selective photo-assisted electro-chemical etching of the nGaP and n-InP substrate and were separated from it by wet chemical etching. Researches of photoelectric characteristics of nanostructured films are presented, modeled and discussed. Photoelectric properties of nanostructured layers make it possible to use such structures for the manufacture of optical detectors and switches.</p></dc:description> <dc:source>Nanotechnologies and Biomedical Engineering (Editia 2) 115-119</dc:source> <dc:subject>nanostructured layer</dc:subject> <dc:subject>photoconductivity</dc:subject> <dc:subject>photoresistor</dc:subject> <dc:subject>porous film</dc:subject> <dc:title>Photoelectric properties of nanostuctured layers</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>
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