Tuning the magnetoelastic properties with substitution of Zr ions in epitaxial cobalt ferrite thin films
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RUS, Stefania Florina, HERKLOTZ, A., VLAZAN, Paulina. Tuning the magnetoelastic properties with substitution of Zr ions in epitaxial cobalt ferrite thin films. In: Materials Science and Condensed Matter Physics, Ed. 7, 16-19 septembrie 2014, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2014, Editia 7, p. 252.
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Materials Science and Condensed Matter Physics
Editia 7, 2014
Conferința "Materials Science and Condensed Matter Physics"
7, Chișinău, Moldova, 16-19 septembrie 2014

Tuning the magnetoelastic properties with substitution of Zr ions in epitaxial cobalt ferrite thin films


Pag. 252-252

Rus Stefania Florina12, Herklotz A.34, Vlazan Paulina1
 
1 National Institute for Research and Development in Electrochemistry and Condensed Matter, Timisoara,
2 Politehnica University of Timisoara,
3 Martin-Luther-Universitat Halle-Wittenberg,
4 IFW Dresden, Institute for Metallic Materials
 
Disponibil în IBN: 12 martie 2019


Rezumat

Structural and magnetic properties of a series of CoFe1.9Zr0.1O4 (CFZO) films with a thickness ranging from 25 to 270 nm has been deposited under epitaxial strain on three (001) oriented singlecrystalline substrates MgO, SrTiO3 and piezoelectric Pb(Mg1/3Nb2/3)0.72Ti0.28O3. The films are grown with high structural quality by pulsed laser deposition technique using a KrF excimer laser (λ = 248 nm; Lambda Physik). The out-of-plane hysteresis loops reveal larger remanence and coercive fields than the in-plane hysteresis loops. All films have perpendicular anisotropy in agreement with the tensile strain found for all films. We find that for 108 nm films of Zr substituted cobalt ferrite films grown on MgO have the largest magnetic anisotropy, followed by the film on PMN-PT. The film grown on STO has the smallest anisotropy. These conclusions are made from the values of remanent magnetization and coercive field. Fig. 1 Structural characterization of the 108 nm thick films grown on MgO, STO and PMN-PT substrates: (a) wide-angle XRD 2θ-ω Fig. 2 The rocking curves of a 270 nm lattice matched film grown on MgO around the 004 reflection of the film (red) and the 002 reflection of the substrate (black) Fig. 3 Magnetization loops (MH) of 108 nm thick films grown on MgO, STO and PMN-PT taken at 300 K a) in plane and b) out-of-plane direction The substrate-induced strain is found effective to alter the magnetic anisotropy of the films. In order to control the reversible strain-dependent measurements an electrical voltage is applied to the PMNPT substrate. The films are under tensile strain and all films show an out-of-plane magnetic anisotropy. The contraction from the PMNPT substrate means a slight release of the as-grown strain. We find that for all C2 films the in-plane Mr is increasing, which is in agreement with the expected behavior. We have investigated the thickness dependence of the magnetoelastic effect on the films using reversible strain from piezoelectric PMN-PT substrates. For all films the effect of strain on the magnetization is smaller than for pure cobalt ferrite films [1] except the case where a larger magnetoelastic effect of CFZO films below 50 nm thickness is obtained. This makes CFZO films a promising candidate in ultra-thin films application where tuning the magnetoelastic property is necessary.