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 898 4 |
| Ultima descărcare din IBN: 2021-11-04 12:28 |
| Căutarea după subiecte similare conform CZU |
| 530.145 (39) |
| Физика (1733) |
 SM ISO690:2012, , , , , , HARTNAGEL, Hans Ludwig. Efficiency enhancement of ingan/gan leds with mg-si co-doped gan quantum barrier. In: Проблемы и вызовы экономики региона в условиях глобализации, Ed. 3, 7 decembrie 2017, Comrat. Comrat, Republica Moldova: Tipografia "A & V Poligraf", 2017, Ediția 3, pp. 222-228. ISBN 978-9975-3021-7-3. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Проблемы и вызовы экономики региона в условиях глобализации Ediția 3, 2017 |
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Conferința "Проблемы и вызовы экономики региона в условиях глобализации" 3, Comrat, Moldova, 7 decembrie 2017 | ||||||
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| CZU: 530.145 | ||||||
| Pag. 222-228 | ||||||
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Blue InGaN/GaN light-emitting diodes with undoped and Mg-Si co-doped GaN barrier are investigated numerically. The simulation results demonstrate that the Mg-Si co-doping of the GaN barrier effectively reduces the polarization-induced electric field between the InGaN well and the GaN barrier in the multiple quantum well, and also suppresses the quantum confined Stark effect, and enhances the hole injection and electron confinement in the active region. For this LED device structure, we found that the turn-on voltage is 2.8 V, peak of light emission is at 415.3 nm and internal quantum efficiency (IQE) is 85.9% at 100 A/cm2. It is established that the LED device with Mg-Si co-doped GaN barrier has significantly improved efficiency and optical output power performance, and have lower efficiency droop up to 400 A/cm2 compared with LEDs with undoped GaN barrier. |
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| Cuvinte-cheie light-emitting diode, Gallium nitride, indium nitride, silicon doping, magnesium doping, pin-doping, internal quantum efficiency |
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Dublin Core Export
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator></dc:creator> <dc:creator></dc:creator> <dc:creator>Kuppers, F.</dc:creator> <dc:creator>Kuppers, F.</dc:creator> <dc:date>2017</dc:date> <dc:description xml:lang='en'><p>Blue InGaN/GaN light-emitting diodes with undoped and Mg-Si co-doped GaN barrier are investigated numerically. The simulation results demonstrate that the Mg-Si co-doping of the GaN barrier effectively reduces the polarization-induced electric field between the InGaN well and the GaN barrier in the multiple quantum well, and also suppresses the quantum confined Stark effect, and enhances the hole injection and electron confinement in the active region. For this LED device structure, we found that the turn-on voltage is 2.8 V, peak of light emission is at 415.3 nm and internal quantum efficiency (IQE) is 85.9% at 100 A/cm2. It is established that the LED device with Mg-Si co-doped GaN barrier has significantly improved efficiency and optical output power performance, and have lower efficiency droop up to 400 A/cm2 compared with LEDs with undoped GaN barrier.</p></dc:description> <dc:source>Проблемы и вызовы экономики региона в условиях глобализации (Ediția 3) 222-228</dc:source> <dc:subject>light-emitting diode</dc:subject> <dc:subject>Gallium nitride</dc:subject> <dc:subject>indium nitride</dc:subject> <dc:subject>silicon doping</dc:subject> <dc:subject>magnesium doping</dc:subject> <dc:subject>pin-doping</dc:subject> <dc:subject>internal quantum efficiency</dc:subject> <dc:title>Efficiency enhancement of ingan/gan leds with mg-si co-doped gan quantum barrier</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>
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