Efficiency enhancement of ingan/gan leds with mg-si co-doped gan quantum barrier
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SIRKELI, Vadim; YILMAZOGLU, Oktay; KUPPERS, Franko; HARTNAGEL, Hans Ludwig. Efficiency enhancement of ingan/gan leds with mg-si co-doped gan quantum barrier. In: Проблемы и вызовы экономики региона в условиях глобализации. Ediția 3, 7 decembrie 2017, Comrat. Comrat, Republica Moldova: Tipogr. "A & V Poligraf, 2017, pp. 222-228. ISBN 978-9975-3021-7-3.
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Проблемы и вызовы экономики региона в условиях глобализации
Ediția 3, 2017
Conferința "Проблемы и вызовы экономики региона в условиях глобализации"
Comrat, Moldova, 7 decembrie 2017

Efficiency enhancement of ingan/gan leds with mg-si co-doped gan quantum barrier


CZU: 530.145
Pag. 222-228

Sirkeli Vadim1, Yilmazoglu Oktay2, Kuppers Franko2, Hartnagel Hans Ludwig2
 
1 Universitatea de Stat din Comrat,
2 Universitatea Tehnică, Darmstadt
 
Disponibil în IBN: 30 ianuarie 2019


Rezumat

Blue InGaN/GaN light-emitting diodes with undoped and Mg-Si co-doped GaN barrier are investigated numerically. The simulation results demonstrate that the Mg-Si co-doping of the GaN barrier effectively reduces the polarization-induced electric field between the InGaN well and the GaN barrier in the multiple quantum well, and also suppresses the quantum confined Stark effect, and enhances the hole injection and electron confinement in the active region. For this LED device structure, we found that the turn-on voltage is 2.8 V, peak of light emission is at 415.3 nm and internal quantum efficiency (IQE) is 85.9% at 100 A/cm2. It is established that the LED device with Mg-Si co-doped GaN barrier has significantly improved efficiency and optical output power performance, and have lower efficiency droop up to 400 A/cm2 compared with LEDs with undoped GaN barrier.

Cuvinte-cheie
light-emitting diode, Gallium nitride, indium nitride, silicon doping, magnesium doping, pin-doping, internal quantum efficiency