Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
726 0 |
SM ISO690:2012 DRAGOMAN, Mircea L., TIGINYANU, Ion, DRAGOMAN, Daniela, DINESCU, Adrian, BRANISTE, Tudor, CIOBANU, Vladimir. Learning mechanisms in memristor networks based on GaN nanomembranes. In: Journal of Applied Physics, 2018, vol. 124, p. 0. ISSN 0021-8979. DOI: https://doi.org/10.1063/1.5034765 |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
Journal of Applied Physics | |
Volumul 124 / 2018 / ISSN 0021-8979 /ISSNe 1089-7550 | |
|
|
DOI:https://doi.org/10.1063/1.5034765 | |
Pag. 0-0 | |
Vezi articolul | |
Rezumat | |
We demonstrate experimentally that single crystalline GaN nanomembranes arranged in simple networks exhibit learning mechanisms such as habituation and dishabituation followed by storage of the response to a certain electrical stimulus. These artificial learning mechanisms are analogous to non-associative learning processes which are identical in simple animals and human beings. We found that the learning time depends on the number of GaN membranes in parallel, and this parameter decreases by 30% when three memristors are connected in parallel compared to the learning time of a single memristor. Moreover, an increased number of parallel memristors reduces the eventual asymmetry in the temporal response of the circuit at positive and negative step voltages. |
|
Cuvinte-cheie Engineering controlled terms III-V semiconductors, Memristors, Nanostructures Engineering uncontrolled terms Artificial learning, Associative learning, Electrical stimuli, Learning mechanism, Negative steps, Simple networks, Single-crystalline, Temporal response Engineering main heading Gallium nitride |
|
|