| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 738 0 |
 SM ISO690:2012URSACHI, Veaceslav, TIGINYANU, Ion, ZALAMAI, Victor, MASALOV, Vladimir, SAMAROV, E., EMELCHENKO, Gennady A., BRIONES, F. Photoluminescence of ZnO layers grown on opals by chemical deposition from zinc nitrate solution. In: Semiconductor Science and Technology, 2004, vol. 19, pp. 851-854. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/19/7/012 |
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  Semiconductor Science and Technology |
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| Volumul 19 / 2004 / ISSN 0268-1242 | |
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| DOI:https://doi.org/10.1088/0268-1242/19/7/012 | |
| Pag. 851-854 | |
| Rezumat | |
The emission from ZnO layers grown on the surface of bulk opals using chemical deposition is studied under excitation by the 351.1 nm line of an Ar+ laser at different excitation power densities and temperatures. The emission spectrum exhibits narrow photoluminescence (PL) bands associated with the recombination of bound and free excitons as well a relatively broad band around 3.31 eV. The width of the excitonic lines (2-3 meV) along with their energy position are indicative of the high quality and strain-free state of the layer. The origin of the 3.31 eV PL band is discussed in connection with its dependence upon the excitation power density and temperature. |
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| Cuvinte-cheie Heterojunctions, Molecular beam epitaxy, photoluminescence, Semiconductor materials, silica, Thermal effects, Electric excitation |
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