Photoluminescence study of CdTe/CdS solar cells grown from a source with Cu residual impurity
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GHIMPU, Lidia, URSAKI, Veacheslav, POTLOG, Tamara, TIGINYANU, Ion. Photoluminescence study of CdTe/CdS solar cells grown from a source with Cu residual impurity. In: Semiconductor Science and Technology, 2005, vol. 20, pp. 1127-1131. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/20/11/005
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Semiconductor Science and Technology
Volumul 20 / 2005 / ISSN 0268-1242

Photoluminescence study of CdTe/CdS solar cells grown from a source with Cu residual impurity

DOI: https://doi.org/10.1088/0268-1242/20/11/005

Pag. 1127-1131

Ghimpu Lidia1, Ursaki Veacheslav2, Potlog Tamara1, Tiginyanu Ion2
 
1 Moldova State University,
2 Institute of Applied Physics, Academy of Sciences of Moldova
 
Disponibil în IBN: 11 aprilie 2018


Rezumat

Three photoluminescence (PL) bands centred at 1.30, 1.35 and 1.45 eV have been observed in the PL spectrum of CdTe/CdS thin film solar cells grown by close space sublimation (CSS) techniques from a source with Cu residual impurity. The bands at 1.30 and 1.45 eV were found to be independent of the technological conditions of the CSS process, while the intensity of the band at 1.35 eV proved to increase with the increase of the source temperature and the decrease of the substrate temperature. This PL band is suggested to correspond to donor-CuCd defects related to the incorporation in the CdTe film of the impurity from the source. The other two bands are associated with defects whose formation does not depend upon the technological processes applied, the band at 1.45 eV being attributed to a VCd-Cl Te defect.

Cuvinte-cheie
Band structure, Cadmium compounds, Impurities, photoluminescence, Spectrum analysis, thin films, sublimation, Vanadium compounds