Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
934 0 |
SM ISO690:2012 ŞIKIMAKA, Olga, PRISĂCARU, Andrian, BRUC, Leonid, USATÎI, Iurie, BURLACU, Alexandru. Influence of Loading Holding Time under Quasistatic Indentation on Electrical Properties and Phase Transformations of Silicon. In: Электронная обработка материалов, 2012, nr. 5(48), pp. 80-85. ISSN 0013-5739. |
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Электронная обработка материалов | ||||||
Numărul 5(48) / 2012 / ISSN 0013-5739 /ISSNe 2345-1718 | ||||||
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Pag. 80-85 | ||||||
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The quasistatic Vickers indentation of Si (100) were applied to investigate the influence of loading holding time on the changes of electrical resistance and phase transformation in the indentation zone. For all used loading regimes with different holding times (2 s, 10 s, 1 h and 10 h) in combination with constant loading-unloading rate (250 mN/s) the electrical resistance in the region of residual indentations was found to be lower than before indentation.
It was shown that this is connected with the formation of semimetallic Si-III phase and amorphous Si of higher pressure
induced by creep process developed under long lasting pressure. The longer the holding time, the greater lowering of
electrical resistance in the indentation region was observed, with the exception of the holding time above 1h, this being
explained by a decelerating creep rate of Si for this interval of time leading to a halt of further extending of amorphous
and Si-III regions of lower electrical resistance. |
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