| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
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 766 2 |
| Ultima descărcare din IBN: 2021-11-27 14:19 |
| Căutarea după subiecte similare conform CZU |
| 621.382.027 (1) |
| Электротехника (1154) |
 SM ISO690:2012RUSANOVSCHI, Vitalie. Divizarea tensiunii de prag Vth în componentele Vot şi Vit. In: Intellectus, 2003, nr. 2, pp. 71-73. ISSN 1810-7079. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Intellectus | ||||||
| Numărul 2 / 2003 / ISSN 1810-7079 /ISSNe 1810-7087 | ||||||
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| CZU: 621.382.027 | ||||||
| Pag. 71-73 | ||||||
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 Descarcă PDF |
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| Rezumat | ||||||
T he irradiation of transistors semiconductor-oxide-metal determines the significant modification
of electrophisics characteristics, including characteristics Volt-Ampere (CVA). The CVA variation
of TMOS takes part at the irradiation as a result of modification of threshold voltage shift at the
accumulation of positive charge Qot in the volume of dielectrique and charge Qit on surface states (SS).
In this work the method is presented that allows the determining of charge in volume and at the
dielectrique surface. The method can be utilized in the researching of different external actions (the
influence of the temperature, ionized radiation) |
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