Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
678 2 |
Ultima descărcare din IBN: 2018-07-18 15:48 |
Căutarea după subiecte similare conform CZU |
621.382.049.77 (3) |
Электротехника (1146) |
SM ISO690:2012 RUSANOVSCHI, Vitalie. Metoda de extragere a parametrilor tranzistorului metal-oxid-semiconductor
. In: Intellectus, 2005, nr. 3, pp. 67-69. ISSN 1810-7079. |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
Intellectus | |||||
Numărul 3 / 2005 / ISSN 1810-7079 /ISSNe 1810-7087 | |||||
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CZU: 621.382.049.77 | |||||
Pag. 67-69 | |||||
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Rezumat | |||||
The aim of the given work, being sequential to the anterior research one, consists in
analyzing systems of modeling the IC elements function and in elaboration of a method of
extraction of the IC elements parameters. The proposed method consecutively describes
realizing of the experimental measures, the mathematical procedure of extraction of the
values of the IC elements parameters from the experimental data and the methods of investigation
and optimization of the parameters during the IR action. The proposed method
removes disadvantages and difficulties of utilization of the SPICE LEVEL model 3 at the
simulation of the IC elements characteristics before and after IR action. |
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