Metoda de extragere a parametrilor tranzistorului metal-oxid-semiconductor
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2018-07-18 15:48
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621.382.049.77 (3)
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RUSANOVSCHI, Vitalie. Metoda de extragere a parametrilor tranzistorului metal-oxid-semiconductor . In: Intellectus, 2005, nr. 3, pp. 67-69. ISSN 1810-7079.
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Intellectus
Numărul 3 / 2005 / ISSN 1810-7079 /ISSNe 1810-7087

Metoda de extragere a parametrilor tranzistorului metal-oxid-semiconductor
CZU: 621.382.049.77

Pag. 67-69

Rusanovschi Vitalie
 
 
Disponibil în IBN: 30 noiembrie 2013


Rezumat

The aim of the given work, being sequential to the anterior research one, consists in analyzing systems of modeling the IC elements function and in elaboration of a method of extraction of the IC elements parameters. The proposed method consecutively describes realizing of the experimental measures, the mathematical procedure of extraction of the values of the IC elements parameters from the experimental data and the methods of investigation and optimization of the parameters during the IR action. The proposed method removes disadvantages and difficulties of utilization of the SPICE LEVEL model 3 at the simulation of the IC elements characteristics before and after IR action.