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SM ISO690:2012 MONAICO, Elena, TRIFAN, Cătălin, MONAICO, Eduard, TIGINYANU, Ion. Elaboration of the platform for flexoelectric investigation of GaN microtubes. In: Journal of Engineering Sciences, 2020, vol. 27, nr. 4, pp. 45-54. ISSN 2587-3474. DOI: https://doi.org/10.5281/zenodo.4288263 |
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Journal of Engineering Sciences | ||||||
Volumul 27, Numărul 4 / 2020 / ISSN 2587-3474 /ISSNe 2587-3482 | ||||||
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DOI:https://doi.org/10.5281/zenodo.4288263 | ||||||
CZU: 621.9.047 | ||||||
Pag. 45-54 | ||||||
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In this paper, the design and elaboration of a cost-effective technological process for the fabrication of the platform for the study of flexoelectric properties of GaN microtubes with the diameter of 2 - 5 μm and the thickness of the microtube walls of 50 nm is proposed. The impact of the design as well as the electrochemical etching parameters (applied voltage, duration of anodization) on the obtained channel dimensions is investigated. The proposed technological route implies electrochemical etching of n-InP semiconductor crystal in an environmentally friendly electrolyte at high etch rate. The technological process was optimized experimentally. It was proposed to introduce a perpendicular channel in which the microtube will be placed to reach a higher stability on the platform during the measurements. |
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Cuvinte-cheie investigation chip, Anodization, flexoelectricity, isotropic etching, Neutral electrolyte, high etch rate, Porous InP, cip de investigație, anodizare, flexoelectricitate, gravare izotropă, electrolit neutru, rată mare de gravare, InP poros |
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The impact of the design as well as the electrochemical etching parameters (applied voltage, duration of anodization) on the obtained channel dimensions is investigated. The proposed technological route implies electrochemical etching of n-InP semiconductor crystal in an environmentally friendly electrolyte at high etch rate. The technological process was optimized experimentally. It was proposed to introduce a perpendicular channel in which the microtube will be placed to reach a higher stability on the platform during the measurements.</p></cfAbstr> <cfAbstr cfLangCode='RO' cfTrans='o'><p>În lucrare se propune proiectarea și elaborarea unui proces tehnologic rentabil pentru fabricarea platformei destoinate studiului proprietăților flexoelectrice a microtuburilor GaN cu diametrul de 2 - 5 μm și grosimea pereților microtuburilor de 50 nm. 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