Stick-slip effect is widely studied in tribology. Investigations on mechanically polished and chemically etched Si wafers showed abnormal solubility inside of separately placed scratches. The etched figure is manifested by high degree of similarity and periodicity inside of scratches [1].figureFig.1. Etched scratches. Chemical treatment of scratches made using microhardness tester PMT-3, with Berkovich indenter show the same results Fig.1. The effect can be explained by different speed of chemical ething due to phase transformations that occur on contact between Si and indenter. Silicon is a unique tribomaterial. Its phase transformation and amorphorization of silicon under loading and scratching have been studied intensively in the past [2-5]. Single crystal silicon has at least 12 reported crystal structures and some of them are metastable. Under stress, silicon undergoes pressure-induced phase transformations. With micro-Raman analysis, Si-III, and Si-XII are observed after microindentation, nanoindentation , and slow scratching . The priority chemical etching can be also explained by mechanical tensions in the material. Article [6] shows that strain localization plays an important role in stick-slip instabilities in amorphous materials. The critical spring stiffness is larger for localized deformation than for homogeneous deformation. The primary effect that increases the critical stiffness for localized strain is an increase in the strain rate in the shear band. Diffusion also plays a role by justifying the increase in the critical stiffness, though the increased strain rate is the dominant effect in determining the stability of steady sliding. Summarized, we can assume that the chemical treatment show the mechanical stress distribution induced in silicon during scratching. The new possibilities in investigating the stick slip-effect appear.