Transparent and conductive oxides (TCO) have optical and electrical properties that make them well suitable to use as transparent front electrode for thin film amorphous and microcrystalline silicon based solar cells. In this work we have realized amorphous p-i-n solar cells on ITO-covered glass substrates. The ITO layers are deposited on the glass substrates by spraying of alcoholic solution of InCl3 and SnCl4 in different proportions using the special installation. The deposition system was elsewhere described [1]. The alcoholic solution of InCl3 and SnCl4 is pulverized with the aid of compressed oxygen into the stove on the substrate, where is formed the ITO thin film due to thermal decomposition of the solution and the oxidation reaction. The optimised materials are obtained at the deposition temperature of 450°C and at InCl3/SnCl4 ratio of 90/10%. The value of ITO thickness is 0.35μm while the sheet resistance of ITO thin layers is about 15Ω/□. ITO films are used as front electrodes for the realisation of a-Si:H solar cells with the structure glass/ITO/p-i-n a-Si:H/ZnO:Al/Ag. The p-i-n structure consists of a 7nm thick amorphous siliconcarbide p-layer, a 270nm thick amorphous silicon i-layer, and a 30nm thick microcrystalline n-layer. The intrinsic layers of the amorphous cell are grown by Very High Frequency Plasma Enhanced Chemical Vapour Deposition (VHF-PECVD) at 100MHz at low substrate temperature (150°C). The plasma power and chamber pressure are 5W and 27Pa (200mTorr). The electrode configuration consists of a 13×13cm2 powered electrode and a 11×11cm2 substrate carrier as the grounded electrode. The inter-electrode distance is kept at 15mm, and the gas supply is a simple cross-flow geometry. Doped layers are grown by conventional RF PECVD technique (13.56MHz) in a separate chamber of the same cluster-tool deposition system, using phosphine and diborane as dopant gases to prepare n-type and p-type materials respectively. Details about deposition parameters and properties of the doped layers are published elsewhere [2]. Metallization consisted of a ZnO backreflector, followed by 1×1cm2 Ag pads. The devices have been characterized by measuring the current-voltage characteristic under AM1.5 illumination and the spectral response. For solar cells with active area of 1cm2 at the following photoelectric parameters were obtained: the short circuit current 13.46mА/cm2, the open circuit voltage 723mV, the fill factor 73.41%, the efficiency 7.14%. The spectral distribution of the quantum efficiency of the thin film amorphous structure is seen that in the region of wavelengths from 350nm to 700nm the value of efficiency changes on the limits 0.7-0.83. The best amorphous p-i-n solar cells efficiency on ITO-covered glass substrate was 7.2% compared to 10.3% on Asahi Type-U SnO2:F and 8.9% on ZnO:B (reference commercial substrates) [3].