In the past 45 years have been many efforts to design and realize good junctions to CdTe films for extraction and collection of light generated charge carriers. Heterojunctions are the most promising configuration. This paper reports on the development and investigation of the n-CdS/p-CdTe, nZnSe/p-CdTe and p-ZnTe/n-CdTe thin film heterojunction photovoltaic cells obtained by closespaced sublimation technique. Thin film photovoltaic cells have been developed in “superstrate” configuration. The thickness of CdS, ZnSe and ZnTe buffer layers was varied in order to adjust the solar cell performance. The photoelectrical characteristics were examined by J-V, C-V and quantum efficiency. The highest efficiency of 11% and 7% has been achieved for CdS/CdTe and ZnSe/CdTe photovoltaic cells, respectively. The highest open circuit voltage of about 1.0 V was obtained for ZnTe/CdTe thin film photovoltaic cell but efficiency was small in comparison with ZnSe/CdTe and CdS/CdTe photovoltaic cells. The external quantum efficiency investigations show that generated carriers are more efficiently collected at the CdS/CdTe interface thin film heterojunction photovoltaic cells.