Zinc oxide (ZnO) crystals draw attention due to relatively low price and perspectives of their utilization in various applications. Commercially available substrates of this compound are usually obtained by hydrothermal methods. However, the presence in these materials of mobile Li or K ions limits their utilization in electronics. In this respect, the elaboration of obtaining technology for ZnO single crystals with controlled electrical parameters and impurity composition by means of chemical vapor transport is of great interest. It is shown that using of HCl as a chemical transport agent and a source of shallow donor impurity (Cl, H) allows obtaining of n-ZnO single crystals with varied electrical parameters (Fig. 1, inset). Photoluminescence (PL) spectra consist of long-wave emission that corresponds to self-activated luminescence centers. The usage of HCl is favorable for the growth of individual single crystals in sealed quartz ampoules, which have minimal surface area contacted with the walls of growth chamber; as a result, the crystals are not subject to deformations during post-growth cooling. Disadvantages of the method are the large ratio between the crystal length and diameter, low growth speed at high temperature gradient It is established that utilization of hydrogen as a transport agent provides high growth speed of the crystals, which fill compactly the growth chamber volume. Effective edge PL of similar materials is generally presented with exciton emission caused by small hydrogen donors (Fig. 1). However, strong mechanical contact between ZnO:H and the walls of growth chamber leads to the destruction of both ampoules and grown crystals.figureFig.1. PL spectra of ZnO crystals (to obtain the real intensity, the values should be multiplied by the attached numbers). Inset: dependence of electrical parameters on HCl concentration in the growth medium. Excitation with nitrogen laser (337.1 nm; ~10 mW/mm2). The chemical vapor transport method with H2+HCl mixture as a transport agent is proposed, that gives high growth speed (1-2 mm/day) at moderate temperature gradient and compact filling of ampoule volume with high-conductive n-ZnO:H:Cl crystals, which are not subject to the essential destruction during post-growth cooling. As an alternative method, the chemical transport with CO as a transport agent is examined, that allows obtaining the materials with predominant edge luminescence (Fig. 1). It is shown that this method may be perspective for obtaining n-type crystals with widely variable electrical parameters and also for obtaining crystals with high density of the shallow acceptors. This work was carried out within the framework of 11.836.05.07A and 11.817.05.11F grants