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 SM ISO690:2012BAKHADIRKHANOV, M., VALIEV, S., NASRIDDINOV, S., TACHILIN, S.. Sensitive Thermosensors on the Basis of Highly Compensated Silicon
. In: Surface Engineering and Applied Electrochemistry, 2007, nr. 6(43), pp. 505-507. ISSN 1068-3755. |
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| Surface Engineering and Applied Electrochemistry | ||||||
| Numărul 6(43) / 2007 / ISSN 1068-3755 /ISSNe 1934-8002 | ||||||
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| Pag. 505-507 | ||||||
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The results of studies and working out and creation of a thermosensor on the basis of highly compensated silicon doped with Mn and S are presented in this work. It is stated that the thermosensitivity and the stability of the parameters of the worked out thermosensor are higher than those of the existing sensitive thermosensor. It is stated that the thermosensor on the basis of highly compensated silicon doped with manganese
Si〈B,Mn〉 more effectively functions in the region of temperatures T = 100–400 K, and the thermosensor on the basis of Si〈B,S〉 can be successfully used in the region of more high temperatures T = 200–450°C.
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