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Ultima descărcare din IBN: 2024-03-10 18:36 |
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SM ISO690:2012 BĂJENESCU, Titu-Marius. Future trends in power electronic devices. In: Journal of Engineering Sciences, 2019, vol. 26, nr. 4, pp. 67-77. ISSN 2587-3474. DOI: https://doi.org/10.5281/zenodo.3591592 |
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Journal of Engineering Sciences | ||||||
Volumul 26, Numărul 4 / 2019 / ISSN 2587-3474 /ISSNe 2587-3482 | ||||||
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DOI:https://doi.org/10.5281/zenodo.3591592 | ||||||
CZU: 62-83:621.38 | ||||||
Pag. 67-77 | ||||||
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Rezumat | ||||||
The recent technological progress of semiconductors and increasing demand for power electronic devices in the different domains of electric energy particularly for applications in aeronautics and networks of transport and distribution impose new specifications such as high frequencies, high voltages, high temperatures and high current densities. All of this contributes in the strong development of power devices. To this end, separation techniques for low-resistivity films should be developed, as well as thick-film growth technologies, including hot filament CVD on insulating wafers. The article outlines the evolution of semiconductor manufacturing, current applications and perspective. |
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Cuvinte-cheie GaN, SiC, Si vs SiC, IGBT, MOSFET, HEMT, HFET, FET, diamond power devices, GaN, SiC, Si vs SiC, IGBT, MOSFET, HEMT, HFET, FET, dispozitive de alimentare pe bază de diamante |
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