Anisotropy of Electric Conductivity in Irradiated TlInS2 Crystals
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MADATOV, R., NADZHAFOV, A., MAMEDOV, V., MAMEDOV, M. Anisotropy of Electric Conductivity in Irradiated TlInS2 Crystals. In: Surface Engineering and Applied Electrochemistry, 2010, nr. 2(46), pp. 154-156. ISSN 1068-3755.
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Surface Engineering and Applied Electrochemistry
Numărul 2(46) / 2010 / ISSN 1068-3755 /ISSNe 1934-8002

Anisotropy of Electric Conductivity in Irradiated TlInS2 Crystals

Pag. 154-156

Madatov R., Nadzhafov A., Mamedov V., Mamedov M
 
 
 
Disponibil în IBN: 13 decembrie 2013


Rezumat

The anisotropy of electric conductivity in hexagonal TlInS2 crystals irradiated with γ quanta are studied. It is found that, upon light exposure (~50 krad), radiation defects accumulate in the interlayer space and in the layer plane. As a result, the electric conductivity σ⊥ and σԽԽ decreases. As the exposure dose increases (above 200 krad), due to the interaction between the radiation defects and the initial inhomogene ities, complex defects appear with the result that the electric conductivity in either direction increases exponentially.