| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 |
 814 1 |
| Ultima descărcare din IBN: 2019-04-28 17:22 |
 SM ISO690:2012ESHPULATOV, B., ARZICULOV, E., KHUZHANOVA, D.. Raman Scattering of Light in Semiconductor Wires
. In: Surface Engineering and Applied Electrochemistry, 2010, nr. 1(46), pp. 80-85. ISSN 1068-3755. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
  Surface Engineering and Applied Electrochemistry |
||||||
| Numărul 1(46) / 2010 / ISSN 1068-3755 /ISSNe 1934-8002 | ||||||
|
||||||
| Pag. 80-85 | ||||||
|
||||||
 Descarcă PDF |
||||||
| Rezumat | ||||||
The differential cross section of Raman scattering in semiconductor size quantized wires is calculated. The interband transitions between the size quantized subbands are considered. It is shown that, in the intermediate states, electron hole pairs exist related to the subbands of the conduction and valence bands. The dependence of the scattering cross section versus the frequency of the exciting and scattered light is analyzed for an arbitrary polarization of the secondary radiation. The singularity of the differential cross section of the scattering is shown.
|
||||||
|
|
|
|
