Derivatographic Studies of Polyethylene Containing a Dispersed Semiconductor
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EYUBOVA, N.; KULIEV, M.; ISMAIILOVA, R.; ABDULLAEV, A.. Derivatographic Studies of Polyethylene Containing a Dispersed Semiconductor . In: Surface Engineering and Applied Electrochemistry. 2011, nr. 3(47), pp. 253-255. ISSN 1068-3755.
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Surface Engineering and Applied Electrochemistry
Numărul 3(47) / 2011 / ISSN 1068-3755 /ISSNe 1934-8002

Derivatographic Studies of Polyethylene Containing a Dispersed Semiconductor

Pag. 253-255

Eyubova N., Kuliev M., Ismaiilova R., Abdullaev A.
 
 
Disponibil în IBN: 16 decembrie 2013


Rezumat

The tendencies of the changes in the physical chemical characteristics of high density polyethylene films and polyethylene composites with a volumetric content of TlInS2 ferroelectric–semiconductor of up to 10% are investigated with the help of the DTA method. The changes in the thermophysical character istics of the analyzed composites are shown to be related to the structural changes of the polymer under the effect of the additive particles with different degrees of dispersion. At 5 vol % of TlInS2, the additive particles act as artificial nuclei of structure formation.