| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 605 0 |
 SM ISO690:2012HO, Josha, BECKER, J., LEEDAHL , Brett D., BOUKHVALOV, Danil W., ZHIDKOV, Ivan, KUKHARENKO, Andrey, KURMAEV, Ernst, CHOLAKH, Seif, GAVRILOV, N., BRYNZARI, Vladimir, MOEWES, Alexander. Electronic structure and structural defects in 3d-metal doped In2O3. In: Journal of Materials Science: Materials in Electronics, 2019, nr. 15(30), pp. 14091-14098. ISSN 0957-4522. DOI: https://doi.org/10.1007/s10854-019-01775-2 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
  Journal of Materials Science: Materials in Electronics |
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| Numărul 15(30) / 2019 / ISSN 0957-4522 /ISSNe 1573-482X | ||||||
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| DOI:https://doi.org/10.1007/s10854-019-01775-2 | ||||||
| Pag. 14091-14098 | ||||||
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| Rezumat | ||||||
Dilute magnetic semiconductors (DMSs) are a highly attractive field of research due to their potential to open new technological functionality. Here, we perform a systematic study of In2O3 thin films with dopant ions of Mn, Co, Ni, and Fe to investigate the unique interaction of each of these ions and their incorporation into the semiconductor lattice. We report substitutional positioning of Fe atoms into the In3+ site and a mixture of interstitial, metallic clustering, and substitutional positioning for Co, Mn, and Ni, discriminating between oxidation states for all dopant atoms. |
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| Cuvinte-cheie Cobalt compounds, Diluted magnetic semiconductors, electronic structure, iron, Manganese compounds |
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