Annealing of Radiation Induced Defects in Silicon
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2023-02-15 12:34
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GAIDAR, G.. Annealing of Radiation Induced Defects in Silicon . In: Surface Engineering and Applied Electrochemistry, 2012, nr. 1(48), pp. 93-105. ISSN 1068-3755.
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Surface Engineering and Applied Electrochemistry
Numărul 1(48) / 2012 / ISSN 1068-3755 /ISSNe 1934-8002

Annealing of Radiation Induced Defects in Silicon

Pag. 93-105

Gaidar G.
 
 
Disponibil în IBN: 16 decembrie 2013


Rezumat

Annealing of the main radiation defects in silicon (A centers, E centers, and divacancies, etc.) is theoretically described on the basis of the experimental data obtained by many authors. The parameters that characterize this process (the activation energies and frequency factors) have been ascertained, and various mechanisms and reactions that determine the conditions for the annealing of the defects were proposed.