Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
714 1 |
Ultima descărcare din IBN: 2023-02-15 12:34 |
SM ISO690:2012 GAIDAR, G.. Annealing of Radiation Induced Defects in Silicon
. In: Surface Engineering and Applied Electrochemistry, 2012, nr. 1(48), pp. 93-105. ISSN 1068-3755. |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
Surface Engineering and Applied Electrochemistry | |||||
Numărul 1(48) / 2012 / ISSN 1068-3755 /ISSNe 1934-8002 | |||||
|
|||||
Pag. 93-105 | |||||
|
|||||
Descarcă PDF | |||||
Rezumat | |||||
Annealing of the main radiation defects in silicon (A centers, E centers, and divacancies, etc.) is theoretically described on the basis of the experimental data obtained by many authors. The parameters that characterize this process (the activation energies and frequency factors) have been ascertained, and various mechanisms and reactions that determine the conditions for the annealing of the defects were proposed.
|
|||||
|