Zn2SnO4 nanodinensional layers’ growth at 300-400 °C by spray method
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BOTNARIUC, Vasile, KOVAL, Andrei, GAUGASH, Petru, KETRUSH, Petru, RAEVSKY, Simion, ROTARU, Corneliu. Zn2SnO4 nanodinensional layers’ growth at 300-400 °C by spray method. In: Central and Eastern European Conference on Thermal Analysis and Calorimetry, Ed. 4, 28-31 august 2017, Chişinău. Germany: Academica Greifswald, 2017, Editia 4, p. 302. ISBN 978-3-940237-47-7.
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Central and Eastern European Conference on Thermal Analysis and Calorimetry
Editia 4, 2017
Conferința "Central and Eastern European Conference"
4, Chişinău, Moldova, 28-31 august 2017

Zn2SnO4 nanodinensional layers’ growth at 300-400 °C by spray method


Pag. 302-302

Botnariuc Vasile, Koval Andrei, Gaugash Petru, Ketrush Petru, Raevsky Simion, Rotaru Corneliu
 
Moldova State University
 
Disponibil în IBN: 9 octombrie 2019


Rezumat

Zinc oxide and its Sn compounds are of particular interest for researchers related to their technical using due to the wide band gap and high resisatance to the temperature, chemical influence and corpuscular radiation. Recently for ZnO and Zn2SnO4 nanometric layers fabrication such a methods as magnetron sputtering, gaseous phase deposition and pulverization are used. Nevertheless the properties of policrystalline layers of these wide band gap semiconductors deposited by pulverization are not sufficiently studieid which delays the process of their practical implementation in different device The objective of our study were establishing of the optimum deposition conditions for ZnO and zinc stanate (Zn2SnO4) layers by pulverization method on the glass substrates and investigation of their electrophysical properties.Tle oxide layers deposition by pulverization method has a serieis of priorities: siplicity; using of low cost equipment; minimum loses of the material; economical at the deposion on large areas; excludes the using of toxic gases. For ZnO and Zn2SnO4 layers fabrication the installation described in [1] was used. The system allows to obtain the ZnO and Zn2SnO4 layers with a surface area up to 80 cm2. The layers were grown in an oxygen atmosphere at a pressure of 40 kPa through the pulverizer. For ZnO and Zn2SnO4 layers deposition the ethanol solutions of ZnCl2 and SnO4 molarity of 0.2M were used. The layers were grown on glass substrates having temperature in the range range of the 300 400 ° C for various ZnCl2 and SnO4 ratios in the solution of a 10 mL volume. ZnO and Zn2SnO4 layers with a thickness of 500-350 nm depending on ZnCl2 / SnO4 ratio there were obtained. The electrical and optical properties of the obtained at the temperture of 300 ºC, 350 ºC și 400ºC layers in dependence of ZnCl2/SnCl4 ratio were studied. The surface resistance of the layers grown for Zn/Sn ratio from 9/1 up to 5/5 is of 107 Ω/cm2 by reaching values of 6⋅107 Ω/cm2 for 1/9 ratio. The optical transmittance in the wavelength region of 300...900 nm is of 60-70% up to the ratio 5/5 and increases to 80% for Zn/Sn ratio where Sn prevails.