Modulation of electrical conductivity and lattice distortions in bulk HVPE-grown GaN

Wolff Niklas; Jordt Philipp; Braniste Tudor; Adelung Rainer; Kienle Lorenz; Tiginyanu Ion

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537.311.322+538.9+544.6+621.38 (1)

Electricitate curentă. Curent electric. Electrocinetică (90)

Fizica materiei condensate. Fizica solidului (349)

Electrochimie (115)

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WOLFF, Niklas, JORDT, Philipp, BRANISTE, Tudor, , , , , , , , , ADELUNG, Rainer, , , KIENLE, Lorenz, TIGINYANU, Ion. Modulation of electrical conductivity and lattice distortions in bulk HVPE-grown GaN. In: ECS Journal of Solid State Science and Technology, 2019, vol. 8, pp. 141-146. ISSN 2162-8769. DOI: https://doi.org/10.1149/2.0041908jss

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ECS Journal of Solid State Science and Technology

Volumul 8 / 2019 / ISSN 2162-8769 /ISSNe 2162-8777

Modulation of electrical conductivity and lattice distortions in bulk HVPE-grown GaN

DOI:https://doi.org/10.1149/2.0041908jss

CZU: 537.311.322+538.9+544.6+621.38

Pag. 141-146

Wolff Niklas¹, Jordt Philipp¹, Braniste Tudor², ², ², ², ¹, Adelung Rainer¹, ¹, Kienle Lorenz¹, Tiginyanu Ion²³

¹ University of Kiel,
² Technical University of Moldova,
³ Academy of Sciences of Moldova

Proiecte:

Menționat în lucrare: 15.817.02.29A Nanomateriale multifuncţionale şi dispozitive nanoelectronice în bază de nitruri, oxizi şi calcogenuri pentru biomedicină

Menționat în lucrare: GA 810652

Promoting smart specialization at the Technical University of Moldova by developing the field of Novel Nanomaterials for BioMedical Applications through excellence in research and twinning

Disponibil în IBN: 3 octombrie 2019

Rezumat

The nature of self-organized three-dimensional structured architectures with spatially modulated electrical conductivity emerging in the process of hydride vapor phase epitaxial growth of single crystalline n-GaN wafers is revealed by photoelectrochemical etching. The amplitude of the carrier concentration modulation throughout the sample is derived from photoluminescence analysis and the localized heterogeneous piezoelectric response is demonstrated. The formation of such architectures is rationalized based on the generation of V-shaped pits and their subsequent overgrowth in variable direction. Detailed structure analysis with respect to X-ray diffraction and transmission electron microscopy gives striking evidence for inelastic strain to manifest in distortions of the P6₃mc wurtzite-type structure. The deviation from hexagonal symmetry by angular distortions of the β angle between the basal plane and c-axis is found to be of around 1°. It is concluded that the lattice distortions are generated by the misfit strains originating during crystal growth, which are slightly relaxed upon photoelectrochemical etching.

Cuvinte-cheie
Carrier concentration, Electric conductivity, electrochemistry, etching, High resolution transmission electron microscopy, III-V semiconductors, Modulation, strain, Zinc sulfide

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