Epitaxial thin films of (Ba1−xCax)(ZryTi1−y)O3 obtained by Pulsed Laser Deposition (PLD)
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ION, Valentin, SCARISONEANU, N., ANDREI, A., CRACIUN, F., BIRJEGA, Ruxandra, DINESCU, Maria. Epitaxial thin films of (Ba1−xCax)(ZryTi1−y)O3 obtained by Pulsed Laser Deposition (PLD). In: Central and Eastern European Conference on Thermal Analysis and Calorimetry, Ed. 4, 28-31 august 2017, Chişinău. Germany: Academica Greifswald, 2017, Editia 4, p. 251. ISBN 978-3-940237-47-7.
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Central and Eastern European Conference on Thermal Analysis and Calorimetry
Editia 4, 2017
Conferința "Central and Eastern European Conference"
4, Chişinău, Moldova, 28-31 august 2017

Epitaxial thin films of (Ba1−xCax)(ZryTi1−y)O3 obtained by Pulsed Laser Deposition (PLD)


Pag. 251-251

Ion Valentin1, Scarisoneanu N.1, Andrei A.1, Craciun F.2, Birjega Ruxandra1, Dinescu Maria1
 
1 National Institute for Laser, Plasma and Radiation Physics (INFLPR),
2 Institute for Complex Systems
 
 
Disponibil în IBN: 3 octombrie 2019


Rezumat

The new non-lead ceramic (Ba1−xCax)(ZryTi1−y)O3 (BCZT), based on BaTiO3 system, were intensified developed in last years in bulk form. The phase diagram of (Ba1−xCax)(ZryTi1−y)O3 (BCZT) system exhibit a morphotropic phase boundary (MPB) point around x/y = 0.15/0.10, where the rhombohedral and tetragonal phases coexist [1]. Different properties can be obtained ranging from normal ferroelectrics up to relaxor ferroelectrics by varying the amount of A-site (Ca2+) and B-site (Ti4+) isovalent substitutions in BCTZ system. The dielectric and piezoelectric properties are maximized at MPB point [2]. Using Pulsed Laser Deposition (PLD) technique, the role of epitaxial strain and fine stoichiometric changes induced into the BCZT thin films during growth on the enhancement of electrical properties is revealed. Thin films of (Ba1−xCax)(ZryTi1−y)O3 growth on pure and Nb doped SrTiO3 substrate were investigated by X -ray diffraction, High resolution transmission electron microscopy (HRTEM) Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Spectroscopic Ellipsometry (SE) and by dielectric spectroscopy techniques [3].