| Conţinutul numărului revistei |
| Articolul precedent |
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 SM ISO690:2012ŞIKIMAKA, Olga, PRISĂCARU, Andrian. Deformation mechanisms under nanoscratching of Si: Effect of scratching speed, load and indenter orientation. In: Materials Research Express, 2019, nr. 6(8), p. 0. ISSN -. DOI: https://doi.org/10.1088/2053-1591/ab1a0d |
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 Materials Research Express |
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| Numărul 6(8) / 2019 / ISSN - /ISSNe 2053-1591 | ||||||
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| DOI:https://doi.org/10.1088/2053-1591/ab1a0d | ||||||
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The deformation peculiarities under the nanoscratching of Si(100) as a function of three factors - (i) orientation of the Berckovich indenter (face-on and edge-on), (ii) load and (iii) scratching speed - were investigated in this work. The load and scratching speed have a mutual influence and their certain combination plays a determining role in the development of one or another mechanism of deformation under the nanoscratching of Si. Along with the phase transformation, three peculiar mechanisms of deformation were found to be involved in the scratching process: brittle fracture (BF), plastic flow (PF) and ductile cutting (DC). The evolution and the relative contribution of these deformation mechanisms in the interval of loads 2-20mN and scratching speeds 20-300 μm/s were studied. It was shown that scratch hardness depends strongly on the scratching speed and load, but this dependence has distinctive features for scratches formed though PF and DC mechanisms. |
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| Cuvinte-cheie deformation mechanism, ductile cutting, plastic flows, cratch hardness, scratching speed, Si |
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