Application of high-frequency non-reactive magnetron sputtering for obtaining photovoltaic (PV) devices
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ZAKHVALINSKII, Vasilii, PILYUK, E., GONCHAROV, I., THAM HONG, Nguyen Thi, SIMASHKEVICH, Aleksey, SHERBAN, Dormidont, BRUC, Leonid, RUSU, Marin. Application of high-frequency non-reactive magnetron sputtering for obtaining photovoltaic (PV) devices. In: Materials Science and Condensed Matter Physics, Ed. 8-th Edition, 12-16 septembrie 2016, Chişinău. Chişinău: Institutul de Fizică Aplicată, 2016, Editia 8, p. 278. ISBN 978-9975-9787-1-2.
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Materials Science and Condensed Matter Physics
Editia 8, 2016
Conferința "International Conference on Materials Science and Condensed Matter Physics"
8-th Edition, Chişinău, Moldova, 12-16 septembrie 2016

Application of high-frequency non-reactive magnetron sputtering for obtaining photovoltaic (PV) devices


Pag. 278-278

Zakhvalinskii Vasilii1, Pilyuk E.1, Goncharov I.1, Tham Hong Nguyen Thi1, Simashkevich Aleksey2, Sherban Dormidont2, Bruc Leonid2, Rusu Marin23
 
1 Belgorod State National Research University, Belgorod,
2 Institute of Applied Physics, Academy of Sciences of Moldova,
3 Helmholtz-Centre Berlin for Materials and Energy
 
Disponibil în IBN: 2 august 2019


Rezumat

The efforts of the scientific community are focused on the elaboration of new types of low-cost photovoltaic (PV) devices. The cost reduction is achieved by simplifying the fabrication technology and reducing the material consumption. The high-frequency non-reactive magnetron sputtering [1, 2] is very promising, because is a non-toxic and a low material consumption deposition method. Different nanolayers, e.g. Cu2ZnSnS4, Cu2SnS3, SiC, Si3N4 were used for the preparation of Si based PV heterojunctions. Thin films of Cu2ZnSnS4, Cu2SnS3, SiC, Si3N4 were obtained by the rf- non-reactive magnetron sputtering method using the Ukrrospribor VN-2000 setup. Previously synthesized materials were used as solid-state targets. The deposition of SiC, Si3N4 was carried out on cold and hot substrates of p-Si (100) with a resistivity of 2 Ohmcm. The electron diffraction investigations were carried out on thin foils of Si3N4 nanofilms in a high-resolution (2 Å) transmission electron microscope (TEM) JEOL JEM-2100. Measurements of the thickness and surface morphology of the thin films were performed using a scanning probe microscope (SPM) and an atomic force microscope (AFM) (NTEGRA Aura, NT-MDT) in a controlled atmosphere of a partial vacuum. The composition of deposited layers was characterized by Raman Spectroscopy (RS) techniques using co-focal nanometric resolution Omega Scope AIST-NT Raman microscope excited with an 532 nm Ar+ laser.  Single-phase Cu2ZnSnS4 and Cu2SnS3 films were deposited by magnetron sputtering. It is shown that high-frequency non-reactive magnetron sputtering of Cu2ZnSnS4 and Cu2SnS3 solid targets is a simple and effective way to deposition both amorphous and crystalline films. The thus-obtained films can be used as absorbent layers in solar cells created from environmentally friendly materials. The investigation of the electrical and photoelectric properties of the fabricated p-Si/amorphous nSiC nanolayer solar cells show that the entire space charge region is located in Si, where a physical p-n junction is formed. The barrier height at the Si/SiC interface estimated from temperature dependent dark I-V measurements is of the order of 0.9-1.0 eV.  The spectral dependence of the Si/SiC photo sensitivity entirely corresponds to the respective characteristic of the Si solar cells. Load I-V characteristics of the elaborated solar cell under standard AM1.5 test conditions demonstrate a conversion efficiency of 7.22%.  The investigation of the electric and photoelectric properties of the p-Si/n- Si3N4 nanolayer SCs shows that a MIS/IL SC is formed. The barrier height at the Si/Si3N4 interface is 0.9-1.0 eV.  The spectral dependence of the Si/Si3N4 SC photo sensitivity entirely corresponds to the respective characteristic of the Si solar cell. Load I-V characteristics of the elaborated SCs demonstrate conversion efficiencies of 6.38%.   Acknowledgements: This work was financially supported by the Ministry of Education and Science of the Russian Federation reference number 2014/420-367.