﻿ ﻿﻿ The relief patterns formed in Ge5As37S58/Se nano-multilayers by electron-beam recording
 Articolul precedent Articolul urmator 39 0 SM ISO690:2012SERGEEV, Sergei; TRIDUH, Ghennadi; ENACHI, Mihail; MESHALKIN, Alexei; IOVU, Mihail; ACHIMOVA, Elena. The relief patterns formed in Ge5As37S58/Se nano-multilayers by electron-beam recording. In: Materials Science and Condensed Matter Physics. Editia a 8-a, 12-16 septembrie 2016, Chişinău. Chişinău: Institutul de Fizică Aplicată, 2016, p. 258. ISBN 978-9975-9787-1-2. EXPORT metadate: Google Scholar Crossref CERIF BibTeXDataCiteDublin Core
Materials Science and Condensed Matter Physics
Editia a 8-a, 2016
Conferința "International Conference on Materials Science and Condensed Matter Physics"
8-th Edition, Chişinău, Moldova, 12-16 septembrie 2016

 The relief patterns formed in Ge5As37S58/Se nano-multilayers by electron-beam recording

Pag. 258-258

 Sergeev Sergei1, Triduh Ghennadi1, Enachi Mihail2, Meshalkin Alexei1, Iovu Mihail1, Achimova Elena1 1 Institute of Applied Physics, Academy of Sciences of Moldova,2 Centrul de Cercetări Ştiinţifice „Materiale şi Dispozitive Semiconductoare“ Disponibil în IBN: 2 august 2019

Rezumat

Amorphous As2S3/Se nano-multilayers posses the necessary properties for direct optical or electron beam recording of relief patterns. Surface relief modulation is based on the enhanced interdiffusion in multilayers stimulated by irradiation. In this communication we present the results of investigation of the surface of patterns formed in Ge5As37S58/Se nano-multilayer structure by electron beam recording.   The vacuum thermal evaporation deposition technique was used for preparing of the amorphous Ge5As37S58/Se multilayer structures. In this case the evaporation of Ge5As37S58 and Se occurred from two separate sources, Glass substrates covered with a thin ITO (Indium Tin Oxide) layer were used.  The cyclic deposition of two different compositions was realized by continuously rotation of the substrate, so the alternating deposition of Ge5As37S58 layer and Se layer occurred in each deposition cycle.  The modulation period and the total thickness of the prepared Ge5As37S58/Se nano-multilayer structure was about 15 nm and 3 µm, respectively. Computer-controlled positioning of electron beam was used for electron beam recording of raster scan patterns. Different micro-pictures, inclusive micro-text were patterned. The BMP files of initial images were designed for this purpose. Typical size of micro-picture was about 1.5×1.5 mm2.            The atomic force microscope (AFM) study of patterns revealed the surface relief modulation of used registration structure. For example, in the Fig. 1 an AFM 3D-image of the letter fragment is shown. In the case of presented pattern the line of the letter is formed by the set of arranged swollen cone-like shaped pixels spaced by 3 µm.  The height of the pixel is about 160 nm.         The AFM images were used for plotting the surface relief profiles.  In particular the profile along the line, that passes through the row of pixels and unirradiated area of registration structure was obtained from the initial AFM image, corresponding to 3D image that is shown in Fig. 1.  The formation of cavity around the cone-like shaped pixel was revealed. It was estimated that the bottom level of cavity lies by nearly 40 nm below the surface level of unexposed multilayer structure. One can conclude that the process of the formation of the 3D-pixel consisted both in swelling and ablation of the multilayer structure. The latter occurred just in the outer regions during the formation of pixels and, probably, was caused by the mass transfer process, induced by electron irradiation. The height of pixels formed by direct electron beam recording as high as 270 nm was achieved. The relief micro-pictures formed by point-to-point electron beam recording show a good reproduction of initial images, including the small picture elements.

### Dublin Core Export

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<dc:creator>Sergheev, S.A.</dc:creator>
<dc:creator>Triduh, G.M.</dc:creator>
<dc:creator>Enachi, M.A.</dc:creator>
<dc:creator>Meşalchin, A.I.</dc:creator>
<dc:creator>Iovu, M.S.</dc:creator>
<dc:creator>Achimova, E.A.</dc:creator>
<dc:date>2016</dc:date>
<dc:description xml:lang='en'><p>Amorphous As2S3/Se nano-multilayers posses the necessary properties for direct optical or electron beam recording of relief patterns. Surface relief modulation is based on the enhanced interdiffusion in multilayers stimulated by irradiation. In this communication we present the results of investigation of the surface of patterns formed in Ge5As37S58/Se nano-multilayer structure by electron beam recording. &nbsp; The vacuum thermal evaporation deposition technique was used for preparing of the amorphous Ge5As37S58/Se multilayer structures. In this case the evaporation of Ge5As37S58 and Se occurred from two separate sources, Glass substrates covered with a thin ITO (Indium Tin Oxide) layer were used.&nbsp; The cyclic deposition of two different compositions was realized by continuously rotation of the substrate, so the alternating deposition of Ge5As37S58 layer and Se layer occurred in each deposition cycle.&nbsp; The modulation period and the total thickness of the prepared Ge5As37S58/Se nano-multilayer structure was about 15 nm and 3 &micro;m, respectively. Computer-controlled positioning of electron beam was used for electron beam recording of raster scan patterns. Different micro-pictures, inclusive micro-text were patterned. The BMP files of initial images were designed for this purpose. Typical size of micro-picture was about 1.5&times;1.5 mm2. &nbsp; &nbsp; &nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; The atomic force microscope (AFM) study of patterns revealed the surface relief modulation of used registration structure. For example, in the Fig. 1 an AFM 3D-image of the letter fragment is shown. In the case of presented pattern the line of the letter is formed by the set of arranged swollen cone-like shaped pixels spaced by 3 &micro;m.&nbsp; The height of the pixel is about 160 nm.&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; The AFM images were used for plotting the surface relief profiles.&nbsp; In particular the profile along the line, that passes through the row of pixels and unirradiated area of registration structure was obtained from the initial AFM image, corresponding to 3D image that is shown in Fig. 1.&nbsp; The formation of cavity around the cone-like shaped pixel was revealed. It was estimated that the bottom level of cavity lies by nearly 40 nm below the surface level of unexposed multilayer structure. One can conclude that the process of the formation of the 3D-pixel consisted both in swelling and ablation of the multilayer structure. The latter occurred just in the outer regions during the formation of pixels and, probably, was caused by the mass transfer process, induced by electron irradiation. The height of pixels formed by direct electron beam recording as high as 270 nm was achieved. The relief micro-pictures formed by point-to-point electron beam recording show a good reproduction of initial images, including the small picture elements.</p></dc:description>
<dc:source>Materials Science and Condensed Matter Physics (Editia a 8-a) 258-258</dc:source>
<dc:title><p>The relief patterns formed in Ge5As37S58/Se nano-multilayers by electron-beam recording</p></dc:title>
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